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In-situ synchrotron x-ray study of the crystallization behavior of Ce 0.9La0.1O2-x thin films deposited on NiW alloy substrates by chemical solution method

Journal Article


Abstract


  • The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860 °C, indicating that interfacial nucleation dominates at the beginning of the amorphous- crystallization transition. Grain growth is almost complete after at 900 °C for 15 min. Analysis of the isothermal process of crystallization at 900 °C by the Johnson-Mehl-Avrami- Kolmogorov equation shows that grain development is mainly controlled by diffusion. The success of this work demonstrates the possibility of studying crystallization behaviors of solution derived films using a nondestructive method, which has the potential of being applicable to most types of thin film samples. © 2011 Elsevier B.V. All rights reserved.

Publication Date


  • 2011

Citation


  • Zhao, Y., Grivel, J. C., Abrahamsen, A. B., Pallewatta, P. G. A. P., He, D., Bednarčík, J., & Zimmermann, M. V. (2011). In-situ synchrotron x-ray study of the crystallization behavior of Ce 0.9La0.1O2-x thin films deposited on NiW alloy substrates by chemical solution method. Materials Letters, 65(17-18), 2669-2672. doi:10.1016/j.matlet.2011.05.072

Scopus Eid


  • 2-s2.0-83755198533

Web Of Science Accession Number


Start Page


  • 2669

End Page


  • 2672

Volume


  • 65

Issue


  • 17-18

Abstract


  • The phase and texture formation of La doped CeO2 (CLO) films deposited by the chemical solution method are studied by in situ synchrotron x-ray diffraction. It is found that the CLO crystallites forms excellent in-plane texture as soon as the phase appears at 860 °C, indicating that interfacial nucleation dominates at the beginning of the amorphous- crystallization transition. Grain growth is almost complete after at 900 °C for 15 min. Analysis of the isothermal process of crystallization at 900 °C by the Johnson-Mehl-Avrami- Kolmogorov equation shows that grain development is mainly controlled by diffusion. The success of this work demonstrates the possibility of studying crystallization behaviors of solution derived films using a nondestructive method, which has the potential of being applicable to most types of thin film samples. © 2011 Elsevier B.V. All rights reserved.

Publication Date


  • 2011

Citation


  • Zhao, Y., Grivel, J. C., Abrahamsen, A. B., Pallewatta, P. G. A. P., He, D., Bednarčík, J., & Zimmermann, M. V. (2011). In-situ synchrotron x-ray study of the crystallization behavior of Ce 0.9La0.1O2-x thin films deposited on NiW alloy substrates by chemical solution method. Materials Letters, 65(17-18), 2669-2672. doi:10.1016/j.matlet.2011.05.072

Scopus Eid


  • 2-s2.0-83755198533

Web Of Science Accession Number


Start Page


  • 2669

End Page


  • 2672

Volume


  • 65

Issue


  • 17-18