Skip to main content
placeholder image

NaNbO3 modified BiScO3-BaTiO3 dielectrics for high-temperature energy storage applications

Journal Article


Abstract


  • Among the lead-free compositions identified as potential capacitor materials, BiScO3-BaTiO3 (BS-BT) relaxor dielectrics exhibit good energy storage performance. In this research, 0.4BS-0.6BT is considered as the parent composition, with NaNbO3 (NN) addition intended to substitute the A and B site cations. The NN modified BS-BT ceramics exhibit excellent temperature stability in terms of their dielectric properties, with the room-temperature dielectric constant on the order of 500–1 000 and variation less than 10% up to 400 °C. In addition, NN has a high band-gap energy leading to increased breakdown strength and energy storage properties in modified compositions. The highest breakdown strength was achieved for 0.4BS-0.55BT-0.05NN, being on the order of 430 kV/cm, and a high energy density of 4.6 J/cm3 with high energy efficiency of 90% was simultaneously achieved. Of particular importance is that the variation of the energy density was below 5% due to the temperature-insensitive dielectric constant, while ∼90% energy efficiency was retained over the temperature range of 25–160 °C. The improved temperature stability with NN addition makes this composition promising for high temperature capacitor and dielectric energy storage applications.

Publication Date


  • 2022

Citation


  • Joseph, J., Cheng, Z., & Zhang, S. (2022). NaNbO3 modified BiScO3-BaTiO3 dielectrics for high-temperature energy storage applications. Journal of Materiomics, 8(4), 731-738. doi:10.1016/j.jmat.2022.04.005

Scopus Eid


  • 2-s2.0-85130329181

Web Of Science Accession Number


Start Page


  • 731

End Page


  • 738

Volume


  • 8

Issue


  • 4

Abstract


  • Among the lead-free compositions identified as potential capacitor materials, BiScO3-BaTiO3 (BS-BT) relaxor dielectrics exhibit good energy storage performance. In this research, 0.4BS-0.6BT is considered as the parent composition, with NaNbO3 (NN) addition intended to substitute the A and B site cations. The NN modified BS-BT ceramics exhibit excellent temperature stability in terms of their dielectric properties, with the room-temperature dielectric constant on the order of 500–1 000 and variation less than 10% up to 400 °C. In addition, NN has a high band-gap energy leading to increased breakdown strength and energy storage properties in modified compositions. The highest breakdown strength was achieved for 0.4BS-0.55BT-0.05NN, being on the order of 430 kV/cm, and a high energy density of 4.6 J/cm3 with high energy efficiency of 90% was simultaneously achieved. Of particular importance is that the variation of the energy density was below 5% due to the temperature-insensitive dielectric constant, while ∼90% energy efficiency was retained over the temperature range of 25–160 °C. The improved temperature stability with NN addition makes this composition promising for high temperature capacitor and dielectric energy storage applications.

Publication Date


  • 2022

Citation


  • Joseph, J., Cheng, Z., & Zhang, S. (2022). NaNbO3 modified BiScO3-BaTiO3 dielectrics for high-temperature energy storage applications. Journal of Materiomics, 8(4), 731-738. doi:10.1016/j.jmat.2022.04.005

Scopus Eid


  • 2-s2.0-85130329181

Web Of Science Accession Number


Start Page


  • 731

End Page


  • 738

Volume


  • 8

Issue


  • 4