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Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States

Journal Article


Abstract


  • Quantum spin Hall insulators (QSHIs) have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, obtaining the clean and atomically sharp ES which serves as ideal 1D spin-polarized nondissipative conducting channels is demanding and still a challenge. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observation of the topological ES at the step edges by the scanning tunneling microscopy (STM) and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits noteworthy robustness against nontime reversal symmetry (non-TRS) perturbations. The theoretical simulations verify the topological nontriviality of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, benefiting to engineer the topological features by using the 1D nanoribbons as building blocks.

UOW Authors


  •   Liu, Yani (external author)
  •   Du, Yi

Publication Date


  • 2021

Citation


  • Zhuang, J., Li, J., Liu, Y., Mu, D., Yang, M., Liu, Y., . . . Du, Y. (2021). Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States. ACS Nano, 15(9), 14850-14857. doi:10.1021/acsnano.1c04928

Scopus Eid


  • 2-s2.0-85114114042

Start Page


  • 14850

End Page


  • 14857

Volume


  • 15

Issue


  • 9

Abstract


  • Quantum spin Hall insulators (QSHIs) have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, obtaining the clean and atomically sharp ES which serves as ideal 1D spin-polarized nondissipative conducting channels is demanding and still a challenge. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observation of the topological ES at the step edges by the scanning tunneling microscopy (STM) and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits noteworthy robustness against nontime reversal symmetry (non-TRS) perturbations. The theoretical simulations verify the topological nontriviality of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, benefiting to engineer the topological features by using the 1D nanoribbons as building blocks.

UOW Authors


  •   Liu, Yani (external author)
  •   Du, Yi

Publication Date


  • 2021

Citation


  • Zhuang, J., Li, J., Liu, Y., Mu, D., Yang, M., Liu, Y., . . . Du, Y. (2021). Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States. ACS Nano, 15(9), 14850-14857. doi:10.1021/acsnano.1c04928

Scopus Eid


  • 2-s2.0-85114114042

Start Page


  • 14850

End Page


  • 14857

Volume


  • 15

Issue


  • 9