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Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As

Journal Article


Abstract


  • Negative differential conductivity (NDC) with a peak/valley ratio of 4.5:1 (4 K) and 2:1 (150 K) is observed in double barrier resonant tunnelling devices based on n-InP/(InGa)As. A transverse magnetic field applied in the plane of the tunnelling barriers (J | B) significantly changes the current-voltage characteristics and eliminates the NDC for fields above -10 T. This behaviour is explained qualitatively in terms of the effect of the magnetic vector potential on the tunnelling electrons. The magneto-oscillations in the tunnelling current for J {norm of matrix}B are discussed in terms of a simple model of resonant tunnelling. © 1988.

UOW Authors


  •   Simmonds, Philip (external author)

Publication Date


  • 1988

Citation


  • Leadbeater, M. L., Eaves, L., Simmonds, P. E., Toombs, G. A., Sheard, F. W., Claxton, P. A., . . . Pate, M. A. (1988). Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As. Solid State Electronics, 31(3-4), 707-710. doi:10.1016/0038-1101(88)90372-3

Scopus Eid


  • 2-s2.0-0023978945

Web Of Science Accession Number


Start Page


  • 707

End Page


  • 710

Volume


  • 31

Issue


  • 3-4

Abstract


  • Negative differential conductivity (NDC) with a peak/valley ratio of 4.5:1 (4 K) and 2:1 (150 K) is observed in double barrier resonant tunnelling devices based on n-InP/(InGa)As. A transverse magnetic field applied in the plane of the tunnelling barriers (J | B) significantly changes the current-voltage characteristics and eliminates the NDC for fields above -10 T. This behaviour is explained qualitatively in terms of the effect of the magnetic vector potential on the tunnelling electrons. The magneto-oscillations in the tunnelling current for J {norm of matrix}B are discussed in terms of a simple model of resonant tunnelling. © 1988.

UOW Authors


  •   Simmonds, Philip (external author)

Publication Date


  • 1988

Citation


  • Leadbeater, M. L., Eaves, L., Simmonds, P. E., Toombs, G. A., Sheard, F. W., Claxton, P. A., . . . Pate, M. A. (1988). Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As. Solid State Electronics, 31(3-4), 707-710. doi:10.1016/0038-1101(88)90372-3

Scopus Eid


  • 2-s2.0-0023978945

Web Of Science Accession Number


Start Page


  • 707

End Page


  • 710

Volume


  • 31

Issue


  • 3-4