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Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices

Journal Article


Abstract


  • Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well. The sequential tunneling arises from intersubband scattering between two quasi-bound states of the well. Near this resonance, the charge buildup in the well can be estimated from the magnetoquantum oscillations.

UOW Authors


  •   Simmonds, Philip (external author)

Publication Date


  • 1988

Citation


  • Eaves, L., Toombs, G. A., Sheard, F. W., Payling, C. A., Leadbeater, M. L., Alves, E. S., . . . Pate, M. A. (1988). Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices. Applied Physics Letters, 52(3), 212-214. doi:10.1063/1.99522

Scopus Eid


  • 2-s2.0-36549098471

Web Of Science Accession Number


Start Page


  • 212

End Page


  • 214

Volume


  • 52

Issue


  • 3

Place Of Publication


Abstract


  • Magnetoquantum oscillations in the tunnel current of double-barrier n-GaAs/(AlGa)As/GaAs/(AlGa)As/GaAs resonant tunneling devices reveal evidence of sequential tunneling in the voltage range corresponding to the resonance when electrons tunnel into the second subband of the GaAs quantum well. The sequential tunneling arises from intersubband scattering between two quasi-bound states of the well. Near this resonance, the charge buildup in the well can be estimated from the magnetoquantum oscillations.

UOW Authors


  •   Simmonds, Philip (external author)

Publication Date


  • 1988

Citation


  • Eaves, L., Toombs, G. A., Sheard, F. W., Payling, C. A., Leadbeater, M. L., Alves, E. S., . . . Pate, M. A. (1988). Sequential tunneling due to intersubband scattering in double-barrier resonant tunneling devices. Applied Physics Letters, 52(3), 212-214. doi:10.1063/1.99522

Scopus Eid


  • 2-s2.0-36549098471

Web Of Science Accession Number


Start Page


  • 212

End Page


  • 214

Volume


  • 52

Issue


  • 3

Place Of Publication