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Ferromagnetism and magnetoresistance of Co-ZnO inhomogeneous magnetic semiconductors

Journal Article


Abstract


  • The Co-ZnO imhomogeneous magnetic semiconductor (IMS) thin films were fabricated on glass substrates. The mechanism for large negative magnetoresistance was discussed. The microstructures of the as-grown films were observed by transmission electron microscopy (TEM). Large negative magnetoresistance of 11% is found at room temperature and it increases with a decrease in temperature up to 36% at 4.8 K.

Publication Date


  • 2004

Citation


  • Yan, S. S., Ren, C., Wang, X., Xin, Y., Zhou, Z. X., Mei, L. M., . . . Garmestani, H. (2004). Ferromagnetism and magnetoresistance of Co-ZnO inhomogeneous magnetic semiconductors. Applied Physics Letters, 84(13), 2376-2378. doi:10.1063/1.1690881

Scopus Eid


  • 2-s2.0-11144357126

Web Of Science Accession Number


Start Page


  • 2376

End Page


  • 2378

Volume


  • 84

Issue


  • 13

Abstract


  • The Co-ZnO imhomogeneous magnetic semiconductor (IMS) thin films were fabricated on glass substrates. The mechanism for large negative magnetoresistance was discussed. The microstructures of the as-grown films were observed by transmission electron microscopy (TEM). Large negative magnetoresistance of 11% is found at room temperature and it increases with a decrease in temperature up to 36% at 4.8 K.

Publication Date


  • 2004

Citation


  • Yan, S. S., Ren, C., Wang, X., Xin, Y., Zhou, Z. X., Mei, L. M., . . . Garmestani, H. (2004). Ferromagnetism and magnetoresistance of Co-ZnO inhomogeneous magnetic semiconductors. Applied Physics Letters, 84(13), 2376-2378. doi:10.1063/1.1690881

Scopus Eid


  • 2-s2.0-11144357126

Web Of Science Accession Number


Start Page


  • 2376

End Page


  • 2378

Volume


  • 84

Issue


  • 13