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Design parameters for a two-state nanomemory device

Journal Article


Abstract


  • In this study, we investigate the internal mechanics for a two-state memory device, comprising a charged metallofullerene which is located inside a closed carbon nanotube. Assuming the Lennard-Jones interaction energy and the continuum approximation, the metallofullerene has two symmetrically placed equal minimum energy positions. On one side the encapsulated metallofullerene represents the zero information state and by applying an external electrical field, the metallofullerene can be made to overcome the energy barrier of the nanotube, and pass from one end of the tube to the other, where the metallofullerene then represents the one information state. �� (2012) Trans Tech Publications, Switzerland.

UOW Authors


  •   Hill, James (external author)

Publication Date


  • 2012

Citation


  • Lee, R. K. F., & Hill, J. M. (2012). Design parameters for a two-state nanomemory device. Materials Science Forum, 700, 85-88. doi:10.4028/www.scientific.net/MSF.700.85

Scopus Eid


  • 2-s2.0-80053942893

Start Page


  • 85

End Page


  • 88

Volume


  • 700

Issue


Place Of Publication


Abstract


  • In this study, we investigate the internal mechanics for a two-state memory device, comprising a charged metallofullerene which is located inside a closed carbon nanotube. Assuming the Lennard-Jones interaction energy and the continuum approximation, the metallofullerene has two symmetrically placed equal minimum energy positions. On one side the encapsulated metallofullerene represents the zero information state and by applying an external electrical field, the metallofullerene can be made to overcome the energy barrier of the nanotube, and pass from one end of the tube to the other, where the metallofullerene then represents the one information state. �� (2012) Trans Tech Publications, Switzerland.

UOW Authors


  •   Hill, James (external author)

Publication Date


  • 2012

Citation


  • Lee, R. K. F., & Hill, J. M. (2012). Design parameters for a two-state nanomemory device. Materials Science Forum, 700, 85-88. doi:10.4028/www.scientific.net/MSF.700.85

Scopus Eid


  • 2-s2.0-80053942893

Start Page


  • 85

End Page


  • 88

Volume


  • 700

Issue


Place Of Publication