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An Analytical Model for the Gate C-V Characteristics of UTB III-V-on-Insulator MIS Structure

Journal Article


Abstract


  • We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III-V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials.

Publication Date


  • 2017

Citation


  • Islam, M. M., Alam, M. N. K., Sarker, M. S., Islam, M. R., & Haque, A. (2017). An Analytical Model for the Gate C-V Characteristics of UTB III-V-on-Insulator MIS Structure. IEEE Journal of the Electron Devices Society, 5(5), 335-339. doi:10.1109/JEDS.2017.2725340

Scopus Eid


  • 2-s2.0-85028912760

Web Of Science Accession Number


Start Page


  • 335

End Page


  • 339

Volume


  • 5

Issue


  • 5

Abstract


  • We propose a physics-based analytical model for gate capacitance-voltage characteristics of ultra-thin-body III-V-on-insulator (XOI) MIS structure. The accuracy of the analytical model is verified by comparing with TCAD results. The model is general and is applicable to different III-V channel materials.

Publication Date


  • 2017

Citation


  • Islam, M. M., Alam, M. N. K., Sarker, M. S., Islam, M. R., & Haque, A. (2017). An Analytical Model for the Gate C-V Characteristics of UTB III-V-on-Insulator MIS Structure. IEEE Journal of the Electron Devices Society, 5(5), 335-339. doi:10.1109/JEDS.2017.2725340

Scopus Eid


  • 2-s2.0-85028912760

Web Of Science Accession Number


Start Page


  • 335

End Page


  • 339

Volume


  • 5

Issue


  • 5