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Study of Ohmic Contact on p-InGaN Using MIGS Model

Conference Paper


Abstract


  • The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for Au/NiO2 (nm)/ p-In0.48Ga0.52N is found to be 2.35× 10-4 Ω- cm2 at 300K and 1.15× 10-4 Ω cm2 at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI2O3(2 nm)/p-In0.48Ga0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as 1.9× 10-4Ω- cm2 at 300K and 0.75× 10-4Ω- cm2 at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.

Publication Date


  • 2019

Citation


  • Islam, A. A., Hasan, M. S., Islam, M. R., Kaysir, M. R., & Mehedi, I. M. (2019). Study of Ohmic Contact on p-InGaN Using MIGS Model. In 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. doi:10.1109/ECACE.2019.8679389

Scopus Eid


  • 2-s2.0-85064715598

Web Of Science Accession Number


Abstract


  • The formation of ohmic contact to p-InGaN has been analyzed here using the Metal induced Gap States (MIGS) model with an ultrathin interfacial layer of insulator. The position of Fermi level and barrier height modulation has been investigated for two different combinations of Metal-Insulator with p-InGaN. In case of p-InGaN with 2nm layer of NiO, Au formed a barrier height of 0.49 eV. The contact resistivity for Au/NiO2 (nm)/ p-In0.48Ga0.52N is found to be 2.35× 10-4 Ω- cm2 at 300K and 1.15× 10-4 Ω cm2 at 600K. It is also observed that the metal with higher work function gives lower barrier height and contact resistivity in case of p-InGaN. For Pt/AI2O3(2 nm)/p-In0.48Ga0.52N, the barrier height becomes 0.312 eV and the contact resistivity is estimated as 1.9× 10-4Ω- cm2 at 300K and 0.75× 10-4Ω- cm2 at 600K. Thus, Pt contact shows better performance than Au contact to p-InGaN. This information of MIS contact could be a good insight for conventional CMOS in case of source/drain applications.

Publication Date


  • 2019

Citation


  • Islam, A. A., Hasan, M. S., Islam, M. R., Kaysir, M. R., & Mehedi, I. M. (2019). Study of Ohmic Contact on p-InGaN Using MIGS Model. In 2nd International Conference on Electrical, Computer and Communication Engineering, ECCE 2019. doi:10.1109/ECACE.2019.8679389

Scopus Eid


  • 2-s2.0-85064715598

Web Of Science Accession Number