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Centimeter-long Ta3N5 nanobelts: synthesis, electrical transport, and photoconductive properties.

Journal Article


Abstract


  • Centimeter-long Ta3N5 nanobelts were synthesized by a reaction of centimeter-long TaS3 nanobelt templates with flowing NH3 at 800�����C for 2��h. The nanobelts have cross-sections of about 50������100��nm(2), and lengths up to 0.5��cm. A field effect transistor (FET) made of a single Ta3N5 nanobelt was fabricated on silica/silicon substrate. The electric transport of the individual nanobelt revealed that the nanobelt is a semiconductor with a room-temperature resistivity of 11.88������m, and can be fitted well with an empirical formula ����=��10831��exp(-T/43.8)��-��22.6, where �� is resistivity (����m) and T is absolute temperature (K). The FET showed decent photoconductive performance under light irradiation in the range 250-630��nm. The photocurrent increased by nearly 10 times the dark current under 450��nm light irradiation at an applied voltage of 5.0��V.

Publication Date


  • 2013

Citation


  • Wu, X. C., Tao, Y. R., Li, L., Bando, Y., & Golberg, D. (2013). Centimeter-long Ta3N5 nanobelts: synthesis, electrical transport, and photoconductive properties.. Nanotechnology, 24(17), 175701. doi:10.1088/0957-4484/24/17/175701

Web Of Science Accession Number


Start Page


  • 175701

Volume


  • 24

Issue


  • 17

Place Of Publication


Abstract


  • Centimeter-long Ta3N5 nanobelts were synthesized by a reaction of centimeter-long TaS3 nanobelt templates with flowing NH3 at 800�����C for 2��h. The nanobelts have cross-sections of about 50������100��nm(2), and lengths up to 0.5��cm. A field effect transistor (FET) made of a single Ta3N5 nanobelt was fabricated on silica/silicon substrate. The electric transport of the individual nanobelt revealed that the nanobelt is a semiconductor with a room-temperature resistivity of 11.88������m, and can be fitted well with an empirical formula ����=��10831��exp(-T/43.8)��-��22.6, where �� is resistivity (����m) and T is absolute temperature (K). The FET showed decent photoconductive performance under light irradiation in the range 250-630��nm. The photocurrent increased by nearly 10 times the dark current under 450��nm light irradiation at an applied voltage of 5.0��V.

Publication Date


  • 2013

Citation


  • Wu, X. C., Tao, Y. R., Li, L., Bando, Y., & Golberg, D. (2013). Centimeter-long Ta3N5 nanobelts: synthesis, electrical transport, and photoconductive properties.. Nanotechnology, 24(17), 175701. doi:10.1088/0957-4484/24/17/175701

Web Of Science Accession Number


Start Page


  • 175701

Volume


  • 24

Issue


  • 17

Place Of Publication