Abstract
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Centimeter-long Ta3N5 nanobelts were synthesized by a reaction of centimeter-long TaS3 nanobelt templates with flowing NH3 at 800�����C for 2��h. The nanobelts have cross-sections of about 50������100��nm(2), and lengths up to 0.5��cm. A field effect transistor (FET) made of a single Ta3N5 nanobelt was fabricated on silica/silicon substrate. The electric transport of the individual nanobelt revealed that the nanobelt is a semiconductor with a room-temperature resistivity of 11.88������m, and can be fitted well with an empirical formula ����=��10831��exp(-T/43.8)��-��22.6, where �� is resistivity (����m) and T is absolute temperature (K). The FET showed decent photoconductive performance under light irradiation in the range 250-630��nm. The photocurrent increased by nearly 10 times the dark current under 450��nm light irradiation at an applied voltage of 5.0��V.