Abstract
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Depth-profiling of elemental composition at the near surface of air-oxidized Ti3SiC2 was studied by secondary ion mass spectrometry (SIMS). The duplex microstructure of oxides formed at air-oxidized Ti3SiC2 surface was observed which consisted of an outer uniform layer of rutile-TiO2 and an inner graded layer of TiO2 and SiO2. The thickness of oxide scales increased with an increase in temperature. Ti3SiC2 is resistant to oxidation in air at up to 1100��C.