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In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon

Journal Article


Abstract


  • We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 1018 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.

Publication Date


  • 1991

Citation


  • Liss, K. D., Magerl, A., Schneider, J. R., & Zulehner, W. (1991). In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon. Journal of Applied Physics, 70(3), 1276-1280. doi:10.1063/1.350336

Scopus Eid


  • 2-s2.0-0345133659

Start Page


  • 1276

End Page


  • 1280

Volume


  • 70

Issue


  • 3

Abstract


  • We present the first in situ measurement of the evolution of strain fields due to oxygen precipitation in silicon single crystals by means of high-resolution neutron backscattering. The integrated reflecting power R and the lattice parameter variations Δd/d which are directly related to the strain fields have been measured as a function of temperature and annealing time. In the temperature range from 300 to 1185 K, high purity float zone crystals maintain the R-values characteristic for perfect crystals. In contrast, Czochralski-grown crystals which contain on the order of 1018 oxygen atoms cm-3 (20 ppm), show a steep increase in reflectivity starting at 1160 K, and which goes through a maximum at 1350 K. At 1456 K, partial annealing occurs with a time constant of several hours.

Publication Date


  • 1991

Citation


  • Liss, K. D., Magerl, A., Schneider, J. R., & Zulehner, W. (1991). In situ neutron diffraction study of lattice deformation during oxygen precipitation in silicon. Journal of Applied Physics, 70(3), 1276-1280. doi:10.1063/1.350336

Scopus Eid


  • 2-s2.0-0345133659

Start Page


  • 1276

End Page


  • 1280

Volume


  • 70

Issue


  • 3