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Hexagonal boron nitride assisted growth of stoichiometric Al2O3 dielectric on graphene for triboelectric nanogenerators

Journal Article


Abstract


  • Here we demonstrate the deposition of a high-k dielectric material on graphene using hexagonal boron nitride (h-BN) nanosheets as a buffer layer. The presence of an h-BN layer on top of the graphene facilitated the growth of high-quality Al2O3 by atomic layer deposition (ALD). Simulation results also support the experimental observations and provide an explanation for the suitability of h-BN as a buffer layer in terms of mixed ionic-covalent B-N bonding. Additionally, h-BN works as a protective shield to prevent graphene oxidation during ALD of Al2O3 for the fabrication of graphene-based devices. Finally, triboelectric nanogenerators (TNGs) based on both Al2O3/h-BN/graphene and Al2O3/graphene structures are demonstrated for further confirming the importance of h-BN for synthesizing high-quality Al2O3 on graphene. It was found that the Al2O3/h-BN/graphene-based TNG reveals meaningful electric power generation under a mechanical friction, while no significant electric power output from the Al2O3/graphene-based TNG is obtained, indicating high charge storage capacity of the dielectric Al2O3 layer on h-BN.

UOW Authors


  •   Han, Sanga (external author)

Publication Date


  • 2015

Citation


  • Han, S. A., Lee, K. H., Kim, T. H., Seung, W., Lee, S. K., Choi, S., . . . Kim, S. W. (2015). Hexagonal boron nitride assisted growth of stoichiometric Al2O3 dielectric on graphene for triboelectric nanogenerators. Nano Energy, 12, 556-566. doi:10.1016/j.nanoen.2015.01.030

Scopus Eid


  • 2-s2.0-84922309509

Start Page


  • 556

End Page


  • 566

Volume


  • 12

Issue


Place Of Publication


Abstract


  • Here we demonstrate the deposition of a high-k dielectric material on graphene using hexagonal boron nitride (h-BN) nanosheets as a buffer layer. The presence of an h-BN layer on top of the graphene facilitated the growth of high-quality Al2O3 by atomic layer deposition (ALD). Simulation results also support the experimental observations and provide an explanation for the suitability of h-BN as a buffer layer in terms of mixed ionic-covalent B-N bonding. Additionally, h-BN works as a protective shield to prevent graphene oxidation during ALD of Al2O3 for the fabrication of graphene-based devices. Finally, triboelectric nanogenerators (TNGs) based on both Al2O3/h-BN/graphene and Al2O3/graphene structures are demonstrated for further confirming the importance of h-BN for synthesizing high-quality Al2O3 on graphene. It was found that the Al2O3/h-BN/graphene-based TNG reveals meaningful electric power generation under a mechanical friction, while no significant electric power output from the Al2O3/graphene-based TNG is obtained, indicating high charge storage capacity of the dielectric Al2O3 layer on h-BN.

UOW Authors


  •   Han, Sanga (external author)

Publication Date


  • 2015

Citation


  • Han, S. A., Lee, K. H., Kim, T. H., Seung, W., Lee, S. K., Choi, S., . . . Kim, S. W. (2015). Hexagonal boron nitride assisted growth of stoichiometric Al2O3 dielectric on graphene for triboelectric nanogenerators. Nano Energy, 12, 556-566. doi:10.1016/j.nanoen.2015.01.030

Scopus Eid


  • 2-s2.0-84922309509

Start Page


  • 556

End Page


  • 566

Volume


  • 12

Issue


Place Of Publication