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Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

Journal Article


Abstract


  • Metal chalcogenides are important members of the two-dimensional (2D) materials family and have been extensively investigated for high-performance electronic device applications. However, when they are produced on a large-scale, their carrier mobilities are strongly influenced by the surface conditions. Here, we print indium sulphide (In2S3) with the thickness down to the single unit cell limit on wafer-scale out of metallic indium liquid, in which structural indium vacancies are formed in an orderly fashion. First principles investigations reveal that the unique ordered-vacancy structure results in a highly dispersive conduction band with low effective electron mass, forming multiple band-like electronic transport channels sandwiched within the crystal structure which are less influenced by the surface conditions. Back-gated field effect transistors are fabricated, and the measured mobility is up to 58 cm2 V-1 s-1 with a high degree of reproducibility, which is amongst one of the highest reported for wafer-scale-grown ultra-thin metal chalcogenides. This establishes ordered-vacancy-enabled semiconductors in the 2D geometry as suitable alternatives for new generation high-performance electronic devices.

UOW Authors


  •   Cheng, Ningyan (external author)
  •   Du, Yi

Publication Date


  • 2020

Citation


  • Jannat, A., Yao, Q., Zavabeti, A., Syed, N., Zhang, B. Y., Ahmed, T., . . . Ou, J. Z. (2020). Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility. Materials Horizons, 7(3), 827-834. doi:10.1039/c9mh01365b

Scopus Eid


  • 2-s2.0-85081005473

Web Of Science Accession Number


Start Page


  • 827

End Page


  • 834

Volume


  • 7

Issue


  • 3

Abstract


  • Metal chalcogenides are important members of the two-dimensional (2D) materials family and have been extensively investigated for high-performance electronic device applications. However, when they are produced on a large-scale, their carrier mobilities are strongly influenced by the surface conditions. Here, we print indium sulphide (In2S3) with the thickness down to the single unit cell limit on wafer-scale out of metallic indium liquid, in which structural indium vacancies are formed in an orderly fashion. First principles investigations reveal that the unique ordered-vacancy structure results in a highly dispersive conduction band with low effective electron mass, forming multiple band-like electronic transport channels sandwiched within the crystal structure which are less influenced by the surface conditions. Back-gated field effect transistors are fabricated, and the measured mobility is up to 58 cm2 V-1 s-1 with a high degree of reproducibility, which is amongst one of the highest reported for wafer-scale-grown ultra-thin metal chalcogenides. This establishes ordered-vacancy-enabled semiconductors in the 2D geometry as suitable alternatives for new generation high-performance electronic devices.

UOW Authors


  •   Cheng, Ningyan (external author)
  •   Du, Yi

Publication Date


  • 2020

Citation


  • Jannat, A., Yao, Q., Zavabeti, A., Syed, N., Zhang, B. Y., Ahmed, T., . . . Ou, J. Z. (2020). Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility. Materials Horizons, 7(3), 827-834. doi:10.1039/c9mh01365b

Scopus Eid


  • 2-s2.0-85081005473

Web Of Science Accession Number


Start Page


  • 827

End Page


  • 834

Volume


  • 7

Issue


  • 3