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Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals

Journal Article


Abstract


  • La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d11 and electromechanical coupling factor k12 were found to be on the order of 6-7��pC/N and ���16%, respectively. The resistivity of LNGA was found to be 1.1 �� 108 �� cm at 500��{ring operator}C, much higher than those values of LTGA and LGS (��� 2.2 �� 107 �� cm for LTGA and ��� 9 �� 106 �� cm for LGS). The RC time constant of LNGA crystal was found to be 224����s at 500��{ring operator}C, while the values were 49����s and 18����s at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature. �� 2008 Elsevier Ltd. All rights reserved.

Publication Date


  • 2008

Citation


  • Zhang, S., Yoshikawa, A., Kamada, K., Frantz, E., Xia, R., Snyder, D. W., . . . Shrout, T. R. (2008). Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals. Solid State Communications, 148(5-6), 213-216. doi:10.1016/j.ssc.2008.08.013

Scopus Eid


  • 2-s2.0-51549110116

Start Page


  • 213

End Page


  • 216

Volume


  • 148

Issue


  • 5-6

Place Of Publication


Abstract


  • La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d11 and electromechanical coupling factor k12 were found to be on the order of 6-7��pC/N and ���16%, respectively. The resistivity of LNGA was found to be 1.1 �� 108 �� cm at 500��{ring operator}C, much higher than those values of LTGA and LGS (��� 2.2 �� 107 �� cm for LTGA and ��� 9 �� 106 �� cm for LGS). The RC time constant of LNGA crystal was found to be 224����s at 500��{ring operator}C, while the values were 49����s and 18����s at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature. �� 2008 Elsevier Ltd. All rights reserved.

Publication Date


  • 2008

Citation


  • Zhang, S., Yoshikawa, A., Kamada, K., Frantz, E., Xia, R., Snyder, D. W., . . . Shrout, T. R. (2008). Growth and characterization of high temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) piezoelectric single crystals. Solid State Communications, 148(5-6), 213-216. doi:10.1016/j.ssc.2008.08.013

Scopus Eid


  • 2-s2.0-51549110116

Start Page


  • 213

End Page


  • 216

Volume


  • 148

Issue


  • 5-6

Place Of Publication