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Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition

Conference Paper


Abstract


  • The piezoresistive property of n-type and p-type nanocrystalline silicon thin films deposited on plastic (PEN) at a substrate temperature of 150 °C by hot-wire chemical vapor deposition, is studied. The crystalline fraction decreased from 80% to 65% in p-type and from 84% to 62% in n-type films, as the dopant gas-to-silane flow rate ratio was increased from 0.18% to 3-3.5%. N-type films have negative gauge factor (- 11 to - 16) and p-type films have positive gauge factor (9 to 25). In n-type films the higher gauge factors (in absolute value) were obtained by increasing the doping level whereas in p-type films higher gauge factors were obtained by increasing the crystalline fraction. © 2006 Elsevier B.V. All rights reserved.

Publication Date


  • 2007

Citation


  • Alpuim, P., Andrade, M., Sencadas, V., Ribeiro, M., Filonovich, S. A., & Lanceros-Mendez, S. (2007). Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition. In Thin Solid Films Vol. 515 (pp. 7658-7661). doi:10.1016/j.tsf.2006.11.138

Scopus Eid


  • 2-s2.0-34547593479

Start Page


  • 7658

End Page


  • 7661

Volume


  • 515

Issue


  • 19 SPEC. ISS.

Abstract


  • The piezoresistive property of n-type and p-type nanocrystalline silicon thin films deposited on plastic (PEN) at a substrate temperature of 150 °C by hot-wire chemical vapor deposition, is studied. The crystalline fraction decreased from 80% to 65% in p-type and from 84% to 62% in n-type films, as the dopant gas-to-silane flow rate ratio was increased from 0.18% to 3-3.5%. N-type films have negative gauge factor (- 11 to - 16) and p-type films have positive gauge factor (9 to 25). In n-type films the higher gauge factors (in absolute value) were obtained by increasing the doping level whereas in p-type films higher gauge factors were obtained by increasing the crystalline fraction. © 2006 Elsevier B.V. All rights reserved.

Publication Date


  • 2007

Citation


  • Alpuim, P., Andrade, M., Sencadas, V., Ribeiro, M., Filonovich, S. A., & Lanceros-Mendez, S. (2007). Piezoresistive properties of nanocrystalline silicon thin films deposited on plastic substrates by hot-wire chemical vapor deposition. In Thin Solid Films Vol. 515 (pp. 7658-7661). doi:10.1016/j.tsf.2006.11.138

Scopus Eid


  • 2-s2.0-34547593479

Start Page


  • 7658

End Page


  • 7661

Volume


  • 515

Issue


  • 19 SPEC. ISS.