Detection of amorphous silica in Air-Oxidized Ti3SiC2 at 500-1000��C by NMR and SIMS

Citation

• Pang, W. K., Low, I. M., & Hanna, J. V. (2010). Detection of amorphous silica in Air-Oxidized Ti3SiC2 at 500-1000��C by NMR and SIMS. In Key Engineering Materials Vol. 434-435 (pp. 169-172). doi:10.4028/www.scientific.net/KEM.434-435.169

Digital Object Identifier (doi)

• 10.4028/www.scientific.net/KEM.434-435.169

Scopus Eid

• 2-s2.0-77955435816

Web Of Science Accession Number

• WOS:000280417300047

Start Page

• 169

End Page

• 172

Volume

• 434-435

Issue

Place Of Publication

Abstract

• The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500-1000��C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at ���1000��C. �� (2010) Trans Tech Publications.

UOW Authors

•   Pang, Wei Kong

Publication Date

• 2010

Publisher

• Trans Tech Publications, Ltd. 

Citation

• Pang, W. K., Low, I. M., & Hanna, J. V. (2010). Detection of amorphous silica in Air-Oxidized Ti3SiC2 at 500-1000��C by NMR and SIMS. In Key Engineering Materials Vol. 434-435 (pp. 169-172). doi:10.4028/www.scientific.net/KEM.434-435.169

Digital Object Identifier (doi)

• 10.4028/www.scientific.net/KEM.434-435.169

Scopus Eid

• 2-s2.0-77955435816

Web Of Science Accession Number

• WOS:000280417300047

Start Page

• 169

End Page

• 172

Volume

• 434-435

Issue

Place Of Publication