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The fabrication of high-quality superconducting FeSe1-xSx films via pulsed laser deposition

Journal Article


Abstract


  • Due to its unique properties, FeSe1-xSx superconductors have been prime candidates to investigate the unconventional superconducting mechanism in iron chalcogenides. In this study, we report the successful preparation of high-quality epitaxial FeSe1-xSx films with x ≤ 0.4 on different substrates via pulsed laser deposition. With different S content, it is found that CaF2 (100) single crystal is the most preferable substrate to use to grow superconducting FeSe1-xSx films. With the increment of S content, the nematic transition temperature (T s) of FeSe1-xSx films decreases simultaneously and disappears at x ≈ 0.2. In contrast to FeSe1-xTex films, the superconducting transition temperature (T c) of FeSe1-xSx films decreases continuously with S doping. And the T c shows no enhancement after the disappearance of T s, suggesting that the nematic transition does not positively impact the superconductivity in these films. In addition to the influence of different S content, it is found that the non-negligible in-plane tensile strain originating mostly from the mismatch between the FeSe1-xSx films and the substrate is the key factor suppressing the superconductivity. Our work can provide constructive guidance for preparing superconducting FeSe1-xSx films and gives a further understanding of the interplay of T s, strain, and superconductivity in iron-chalcogenide films.

Publication Date


  • 2020

Citation


  • Ma, Q., Lan, F., Qiu, W., Ma, Z., Li, H., & Liu, Y. (2020). The fabrication of high-quality superconducting FeSe1-xSx films via pulsed laser deposition. Superconductor Science and Technology, 33(3). doi:10.1088/1361-6668/ab66e6

Scopus Eid


  • 2-s2.0-85080928035

Web Of Science Accession Number


Volume


  • 33

Issue


  • 3

Abstract


  • Due to its unique properties, FeSe1-xSx superconductors have been prime candidates to investigate the unconventional superconducting mechanism in iron chalcogenides. In this study, we report the successful preparation of high-quality epitaxial FeSe1-xSx films with x ≤ 0.4 on different substrates via pulsed laser deposition. With different S content, it is found that CaF2 (100) single crystal is the most preferable substrate to use to grow superconducting FeSe1-xSx films. With the increment of S content, the nematic transition temperature (T s) of FeSe1-xSx films decreases simultaneously and disappears at x ≈ 0.2. In contrast to FeSe1-xTex films, the superconducting transition temperature (T c) of FeSe1-xSx films decreases continuously with S doping. And the T c shows no enhancement after the disappearance of T s, suggesting that the nematic transition does not positively impact the superconductivity in these films. In addition to the influence of different S content, it is found that the non-negligible in-plane tensile strain originating mostly from the mismatch between the FeSe1-xSx films and the substrate is the key factor suppressing the superconductivity. Our work can provide constructive guidance for preparing superconducting FeSe1-xSx films and gives a further understanding of the interplay of T s, strain, and superconductivity in iron-chalcogenide films.

Publication Date


  • 2020

Citation


  • Ma, Q., Lan, F., Qiu, W., Ma, Z., Li, H., & Liu, Y. (2020). The fabrication of high-quality superconducting FeSe1-xSx films via pulsed laser deposition. Superconductor Science and Technology, 33(3). doi:10.1088/1361-6668/ab66e6

Scopus Eid


  • 2-s2.0-85080928035

Web Of Science Accession Number


Volume


  • 33

Issue


  • 3