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Crystallographic dependence of loss in domain engineered relaxor-PT single crystals

Journal Article


Abstract


  • Domain engineered ��� 001 ��� oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the ��� 110 ��� orientation. The high Q, together with high electromechanical coupling (���0.9) for ��� 110 ��� oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications. �� 2009 American Institute of Physics.

Publication Date


  • 2009

Citation


  • Zhang, S., Sherlock, N. P., Meyer, R. J., & Shrout, T. R. (2009). Crystallographic dependence of loss in domain engineered relaxor-PT single crystals. Applied Physics Letters, 94(16). doi:10.1063/1.3125431

Scopus Eid


  • 2-s2.0-65449145541

Volume


  • 94

Issue


  • 16

Place Of Publication


Abstract


  • Domain engineered ��� 001 ��� oriented relaxor- PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss (0.5%) and strain-electric field hysteresis are reflective of "hard" piezoelectric materials. In this work, the electromechanical behavior of relaxor-PT crystals was investigated as a function of crystallographic orientations. It was found that the electrical and mechanical losses in crystals depends on the specific engineered domain configuration, with high Q observed for the ��� 110 ��� orientation. The high Q, together with high electromechanical coupling (���0.9) for ��� 110 ��� oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications. �� 2009 American Institute of Physics.

Publication Date


  • 2009

Citation


  • Zhang, S., Sherlock, N. P., Meyer, R. J., & Shrout, T. R. (2009). Crystallographic dependence of loss in domain engineered relaxor-PT single crystals. Applied Physics Letters, 94(16). doi:10.1063/1.3125431

Scopus Eid


  • 2-s2.0-65449145541

Volume


  • 94

Issue


  • 16

Place Of Publication