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Flux growth of pure and lanthanum (La3+)-substituted Bi 4Ti3O12 single crystals and their characterization

Journal Article


Abstract


  • In this paper, we report the growth of pure Bi4Ti 3O12 (BIT) and Bi4-xLaxTi 3O12 (x = 0.25, 0.50 and 0.75) single crystals by high-temperature solution growth (flux growth). The effects of La substitution on structural, optical transmission, ionic conductivity, dielectric constant and ferroelectric properties have been studied. Powder X-ray diffraction (XRD) and Differential thermal analysis (DTA) results reveal that the presence of La increases lattice constant (along the b- and c-axes) and liquidus and crystallization temperature of BIT. The deviation in La concentration in grown crystals from the initial La concentration was revealed by Energy dispersive X-ray analysis (EDAX). The incorporation of La ions also shifts the fundamental absorption edge in the UV-vis spectrum towards the higher-energy region and changes the absorption coefficient of BIT. Decreases in the dielectric constant, loss factor and ionic conductivity of BIT were observed with an increase in La concentration. Although, a significant improvement in remnant polarization was observed in P-E studies, La incorporation markedly increased the coercive field of BIT. © 2006 The Japan Society of Applied Physics.

Publication Date


  • 2006

Citation


  • Kannan, C. V., Cheng, Z., Kimura, H., & Miyazaki, A. (2006). Flux growth of pure and lanthanum (La3+)-substituted Bi 4Ti3O12 single crystals and their characterization. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(2 A), 835-840. doi:10.1143/JJAP.45.835

Scopus Eid


  • 2-s2.0-32244444779

Start Page


  • 835

End Page


  • 840

Volume


  • 45

Issue


  • 2 A

Abstract


  • In this paper, we report the growth of pure Bi4Ti 3O12 (BIT) and Bi4-xLaxTi 3O12 (x = 0.25, 0.50 and 0.75) single crystals by high-temperature solution growth (flux growth). The effects of La substitution on structural, optical transmission, ionic conductivity, dielectric constant and ferroelectric properties have been studied. Powder X-ray diffraction (XRD) and Differential thermal analysis (DTA) results reveal that the presence of La increases lattice constant (along the b- and c-axes) and liquidus and crystallization temperature of BIT. The deviation in La concentration in grown crystals from the initial La concentration was revealed by Energy dispersive X-ray analysis (EDAX). The incorporation of La ions also shifts the fundamental absorption edge in the UV-vis spectrum towards the higher-energy region and changes the absorption coefficient of BIT. Decreases in the dielectric constant, loss factor and ionic conductivity of BIT were observed with an increase in La concentration. Although, a significant improvement in remnant polarization was observed in P-E studies, La incorporation markedly increased the coercive field of BIT. © 2006 The Japan Society of Applied Physics.

Publication Date


  • 2006

Citation


  • Kannan, C. V., Cheng, Z., Kimura, H., & Miyazaki, A. (2006). Flux growth of pure and lanthanum (La3+)-substituted Bi 4Ti3O12 single crystals and their characterization. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 45(2 A), 835-840. doi:10.1143/JJAP.45.835

Scopus Eid


  • 2-s2.0-32244444779

Start Page


  • 835

End Page


  • 840

Volume


  • 45

Issue


  • 2 A