Skip to main content
placeholder image

Design and quantification of a nanoscale field effect transistor: Distributed response analysis for investigating conductive behaviour

Conference Paper


Abstract


  • A new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951 - 7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.

Publication Date


  • 2002

Citation


  • In Het Panhuis, M., Coleman, J. N., Popelier, P. A., Foley, B., Munn, R. W., & Blau, W. J. (2002). Design and quantification of a nanoscale field effect transistor: Distributed response analysis for investigating conductive behaviour. In Materials Research Society Symposium - Proceedings Vol. 706 (pp. 365-370).

Scopus Eid


  • 2-s2.0-0036350387

Start Page


  • 365

End Page


  • 370

Volume


  • 706

Abstract


  • A new design for a field effect transistor able to push back the physical limits of Moore's Law is described. An ab initio computational approach is presented that can be further developed to characterize the ON/OFF states of such a device. Distributed response analysis (M. in het Panhuis, P.L.A. Popelier, R.W. Munn, J.G. Ágyán (2001), J. Chem. Phys. 114, 7951 - 7961) is employed to investigate conductive behavior. The method demonstrates that in analogy to conduction an electron can move across a possible conjugated molecular switching element (para-nitroaniline) in an electric field.

Publication Date


  • 2002

Citation


  • In Het Panhuis, M., Coleman, J. N., Popelier, P. A., Foley, B., Munn, R. W., & Blau, W. J. (2002). Design and quantification of a nanoscale field effect transistor: Distributed response analysis for investigating conductive behaviour. In Materials Research Society Symposium - Proceedings Vol. 706 (pp. 365-370).

Scopus Eid


  • 2-s2.0-0036350387

Start Page


  • 365

End Page


  • 370

Volume


  • 706