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Fast switching and oscillatory behavior of nonlinear transistors in terahertz regime

Conference Paper


Abstract


  • We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. This provides multiple knobs to manipulate the non-local current and the device acts as a highly tunable transistor that operates purely in the non-local transport regime.

Publication Date


  • 2018

Citation


  • Ang, Y. S., Ang, L. K., Zhang, C., & Ma, Z. (2018). Fast switching and oscillatory behavior of nonlinear transistors in terahertz regime. In Optics InfoBase Conference Papers.

Scopus Eid


  • 2-s2.0-85084953053

Web Of Science Accession Number


Abstract


  • We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. This provides multiple knobs to manipulate the non-local current and the device acts as a highly tunable transistor that operates purely in the non-local transport regime.

Publication Date


  • 2018

Citation


  • Ang, Y. S., Ang, L. K., Zhang, C., & Ma, Z. (2018). Fast switching and oscillatory behavior of nonlinear transistors in terahertz regime. In Optics InfoBase Conference Papers.

Scopus Eid


  • 2-s2.0-85084953053

Web Of Science Accession Number