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Bipolar transistor equivalents in CMOS technology

Conference Paper


Abstract


  • A CMOS circuit element equivalent to a bipolar junction transistor(BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65GHz in a 0.8μm CMOS technology and the fabricated prototype has 2.3×10-16 A of Is, 2.4mA of IKF and 390V of Early voltage.

Publication Date


  • 1995

Citation


  • Kim, G., Kim, M. K., Kim, W., & Bouzerdoum, A. (1995). Bipolar transistor equivalents in CMOS technology. In Midwest Symposium on Circuits and Systems Vol. 1 (pp. 45-48).

Scopus Eid


  • 2-s2.0-0029463718

Start Page


  • 45

End Page


  • 48

Volume


  • 1

Abstract


  • A CMOS circuit element equivalent to a bipolar junction transistor(BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the β, and Early voltage are superior to those of a typical BJT below about 1.65GHz in a 0.8μm CMOS technology and the fabricated prototype has 2.3×10-16 A of Is, 2.4mA of IKF and 390V of Early voltage.

Publication Date


  • 1995

Citation


  • Kim, G., Kim, M. K., Kim, W., & Bouzerdoum, A. (1995). Bipolar transistor equivalents in CMOS technology. In Midwest Symposium on Circuits and Systems Vol. 1 (pp. 45-48).

Scopus Eid


  • 2-s2.0-0029463718

Start Page


  • 45

End Page


  • 48

Volume


  • 1