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Hopping rate of localized defects interacting with two-dimensional electron systems in a magnetic field

Journal Article


Abstract


  • The hopping rate of localized defects interacting with a two-dimensional electron system is studied. It is shown that, at low temperatures, the hopping rate is an oscillatory function of the inverse ofthe magnetic field. The period and the amplification of the oscillations are independent of the electron-defect interaction and the detailed structure of the sample. It is predicted that the temperature dependence of the hopping rate differs significantly between the cases of filled and half-filled Landau levels. © 1990.

Publication Date


  • 1990

Citation


  • Zhang, C. (1990). Hopping rate of localized defects interacting with two-dimensional electron systems in a magnetic field. Physics Letters A, 148(3-4), 193-198. doi:10.1016/0375-9601(90)90777-L

Scopus Eid


  • 2-s2.0-30244483880

Web Of Science Accession Number


Start Page


  • 193

End Page


  • 198

Volume


  • 148

Issue


  • 3-4

Abstract


  • The hopping rate of localized defects interacting with a two-dimensional electron system is studied. It is shown that, at low temperatures, the hopping rate is an oscillatory function of the inverse ofthe magnetic field. The period and the amplification of the oscillations are independent of the electron-defect interaction and the detailed structure of the sample. It is predicted that the temperature dependence of the hopping rate differs significantly between the cases of filled and half-filled Landau levels. © 1990.

Publication Date


  • 1990

Citation


  • Zhang, C. (1990). Hopping rate of localized defects interacting with two-dimensional electron systems in a magnetic field. Physics Letters A, 148(3-4), 193-198. doi:10.1016/0375-9601(90)90777-L

Scopus Eid


  • 2-s2.0-30244483880

Web Of Science Accession Number


Start Page


  • 193

End Page


  • 198

Volume


  • 148

Issue


  • 3-4