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Nonvolatile Multistates Memories for High-Density Data Storage

Journal Article


Abstract


  • In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.

Publication Date


  • 2020

Citation


  • Cao, Q., Lü, W., Wang, X. R., Guan, X., Wang, L., Yan, S., . . . Wang, X. (2020). Nonvolatile Multistates Memories for High-Density Data Storage. ACS Applied Materials and Interfaces, 12(38), 42449-42471. doi:10.1021/acsami.0c10184

Scopus Eid


  • 2-s2.0-85091562543

Start Page


  • 42449

End Page


  • 42471

Volume


  • 12

Issue


  • 38

Abstract


  • In the current information age, the realization of memory devices with energy efficient design, high storage density, nonvolatility, fast access, and low cost is still a great challenge. As a promising technology to meet these stringent requirements, nonvolatile multistates memory (NMSM) has attracted lots of attention over the past years. Owing to the capability to store data in more than a single bit (0 or 1), the storage density is dramatically enhanced without scaling down the memory cell, making memory devices more efficient and less expensive. Multistates in a single cell also provide an unconventional in-memory computing platform beyond the Von Neumann architecture and enable neuromorphic computing with low power consumption. In this review, an in-depth perspective is presented on the recent progress and challenges on the device architectures, material innovation, working mechanisms of various types of NMSMs, including flash, magnetic random-access memory (MRAM), resistive random-access memory (RRAM), ferroelectric random-access memory (FeRAM), and phase-change memory (PCM). The intriguing properties and performance of these NMSMs, which are the key to realizing highly integrated memory hierarchy, are discussed and compared.

Publication Date


  • 2020

Citation


  • Cao, Q., Lü, W., Wang, X. R., Guan, X., Wang, L., Yan, S., . . . Wang, X. (2020). Nonvolatile Multistates Memories for High-Density Data Storage. ACS Applied Materials and Interfaces, 12(38), 42449-42471. doi:10.1021/acsami.0c10184

Scopus Eid


  • 2-s2.0-85091562543

Start Page


  • 42449

End Page


  • 42471

Volume


  • 12

Issue


  • 38