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Correction to: Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure (Journal of Materials Science, (2020), 55, 26, (11999-12007), 10.1007/s10853-020-04867-1)

Journal Article


Abstract


  • In the original article, Fig. 3 was incorrect. The original article has been updated to display the corrected figure.

Publication Date


  • 2020

Citation


  • Zheng, J., Li, E., Cui, Z., Ma, D., & Wang, X. (2020). Correction to: Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure (Journal of Materials Science, (2020), 55, 26, (11999-12007), 10.1007/s10853-020-04867-1). Journal of Materials Science, 55(28), 14074. doi:10.1007/s10853-020-04903-0

Scopus Eid


  • 2-s2.0-85087042880

Web Of Science Accession Number


Start Page


  • 14074

Volume


  • 55

Issue


  • 28

Abstract


  • In the original article, Fig. 3 was incorrect. The original article has been updated to display the corrected figure.

Publication Date


  • 2020

Citation


  • Zheng, J., Li, E., Cui, Z., Ma, D., & Wang, X. (2020). Correction to: Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure (Journal of Materials Science, (2020), 55, 26, (11999-12007), 10.1007/s10853-020-04867-1). Journal of Materials Science, 55(28), 14074. doi:10.1007/s10853-020-04903-0

Scopus Eid


  • 2-s2.0-85087042880

Web Of Science Accession Number


Start Page


  • 14074

Volume


  • 55

Issue


  • 28