Correction to: Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure (Journal of Materials Science, (2020), 55, 26, (11999-12007), 10.1007/s10853-020-04867-1)

Citation

• Zheng, J., Li, E., Cui, Z., Ma, D., & Wang, X. (2020). Correction to: Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure (Journal of Materials Science, (2020), 55, 26, (11999-12007), 10.1007/s10853-020-04867-1). Journal of Materials Science, 55(28), 14074. doi:10.1007/s10853-020-04903-0

Digital Object Identifier (doi)

• 10.1007/s10853-020-04903-0

Scopus Eid

• 2-s2.0-85087042880

Web Of Science Accession Number

Start Page

• 14074

Volume

• 55

Issue

• 28

Abstract

• In the original article, Fig. 3 was incorrect. The original article has been updated to display the corrected figure.

UOW Authors

•   Wang, Xiaolin

Publication Date

• 2020

Publisher

• Springer Science and Business Media LLC 

Published In

• Journal of Materials Science  Journal

Citation

• Zheng, J., Li, E., Cui, Z., Ma, D., & Wang, X. (2020). Correction to: Effects of doping and biaxial strain on the electronic properties of GaN/graphene/WS2 trilayer vdW heterostructure (Journal of Materials Science, (2020), 55, 26, (11999-12007), 10.1007/s10853-020-04867-1). Journal of Materials Science, 55(28), 14074. doi:10.1007/s10853-020-04903-0

Digital Object Identifier (doi)

• 10.1007/s10853-020-04903-0

Scopus Eid

• 2-s2.0-85087042880

Web Of Science Accession Number

Start Page

• 14074

Volume

• 55

Issue

• 28