Thin La1-xAxCu0.5Mn0.5O3 (A = Ca, Sr, Ba; x=0.1, 0.2, 0.3) films were deposited on polycrystalline Al2O3 substrates using the sol-gel technique. It was found that the phase composition was not greatly affected by the substituting elements, but, the film morphology strongly depended on the type and concentration of alkali earth elements. Films containing Ca were most porous with significant cracks while Sr substitution lead to inhomogeneous films of large surface area. The introduction of Ba produced dense films and the formation of inhomogeneous packages of crystallites on the surface. The relative dependence of electrical resistivity on temperature was similar for all films in the temperature range 25-600°C and exhibited semiconducting behaviour with an almost linear slope in the range 25-80°C. The results permit comparison with films prepared by others using vacuum techniques. Copyright © 1996 Elsevier Science Ltd.