Photocurrent spectroscopy in a sawtooth doping superlattice

Citation

• Ullrich, B., Zhang, C., Fronius, H., & Klitzing, K. V. (1988). Photocurrent spectroscopy in a sawtooth doping superlattice. Applied Physics Letters, 52(23), 1967-1969. doi:10.1063/1.99592

Digital Object Identifier (doi)

• 10.1063/1.99592

Scopus Eid

• 2-s2.0-36549101553

Web Of Science Accession Number

• WOS:A1988N682200013

Start Page

• 1967

End Page

• 1969

Volume

• 52

Issue

• 23

Place Of Publication

Abstract

• We report an investigation of photocurrent response in a sawtooth doping superlattice which is composed of alternating n(Si) and p(Be) ��-doping layers with undoped GaAs layers (7-15 nm) between them. A selective contact method is used to measure the interesting behavior of the subband gap compared with the gap of the host semiconductor. The photocurrent is finite even when the photon energy is below the gap of GaAs and can be varied by applying a bias voltage between the n and p contacts. The observed phenomena can be explained by a generalized Franz-Keldysh model which takes into account the finite voltage drop inside the sample.

UOW Authors

•   Zhang, C

Publication Date

• 1988

Publisher

• AIP Publishing 

Published In

• Applied Physics Letters  Journal

Citation

• Ullrich, B., Zhang, C., Fronius, H., & Klitzing, K. V. (1988). Photocurrent spectroscopy in a sawtooth doping superlattice. Applied Physics Letters, 52(23), 1967-1969. doi:10.1063/1.99592

Digital Object Identifier (doi)

• 10.1063/1.99592

Scopus Eid

• 2-s2.0-36549101553

Web Of Science Accession Number

• WOS:A1988N682200013

Start Page

• 1967

End Page

• 1969

Volume

• 52

Issue

• 23

Place Of Publication