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Population inversion among electronic subbands in optically pumped semiconductor quantum wells

Conference Paper


Abstract


  • A theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well structure which may behave as a three-level system to generate far-infrared laser radiations. The results obtained indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g., applying an in-plane control voltage.

Publication Date


  • 1996

Citation


  • Xu, W., & Zhang, C. (1996). Population inversion among electronic subbands in optically pumped semiconductor quantum wells. In Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 466-469).

Scopus Eid


  • 2-s2.0-0030361653

Start Page


  • 466

End Page


  • 469

Abstract


  • A theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well structure which may behave as a three-level system to generate far-infrared laser radiations. The results obtained indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g., applying an in-plane control voltage.

Publication Date


  • 1996

Citation


  • Xu, W., & Zhang, C. (1996). Population inversion among electronic subbands in optically pumped semiconductor quantum wells. In Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 466-469).

Scopus Eid


  • 2-s2.0-0030361653

Start Page


  • 466

End Page


  • 469