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Enhancement of terahertz acoustic-phonon generation by the magnetic field applied parallel to a two-dimensional semiconductor system

Journal Article


Abstract


  • In this letter, we present a theoretical study on terahertz (THz) acoustic-phonon emission in AlxGa1-xAs parabolic quantum-well structures in parallel magnetic fields. Our theoretical results show that (i) the generation of acoustic-phonon signals can be enhanced significantly by the in-plane magnetic fields; (ii) the strongest acoustic-phonon emission can be observed around a magnetic field where an electronic subband becomes depopulated; (iii) the generated acoustic-phonon frequency depends weakly on the magnetic fields; and (iv) the presence of an in-plane magnetic field slightly varies the acoustic-phonon emission angle from that at zero magnetic field. © 1996 American Institute of Physics.

Publication Date


  • 1995

Citation


  • Xu, W., & Zhang, C. (1995). Enhancement of terahertz acoustic-phonon generation by the magnetic field applied parallel to a two-dimensional semiconductor system. Applied Physics Letters, 823. doi:10.1063/1.116545

Scopus Eid


  • 2-s2.0-36449007479

Start Page


  • 823

Abstract


  • In this letter, we present a theoretical study on terahertz (THz) acoustic-phonon emission in AlxGa1-xAs parabolic quantum-well structures in parallel magnetic fields. Our theoretical results show that (i) the generation of acoustic-phonon signals can be enhanced significantly by the in-plane magnetic fields; (ii) the strongest acoustic-phonon emission can be observed around a magnetic field where an electronic subband becomes depopulated; (iii) the generated acoustic-phonon frequency depends weakly on the magnetic fields; and (iv) the presence of an in-plane magnetic field slightly varies the acoustic-phonon emission angle from that at zero magnetic field. © 1996 American Institute of Physics.

Publication Date


  • 1995

Citation


  • Xu, W., & Zhang, C. (1995). Enhancement of terahertz acoustic-phonon generation by the magnetic field applied parallel to a two-dimensional semiconductor system. Applied Physics Letters, 823. doi:10.1063/1.116545

Scopus Eid


  • 2-s2.0-36449007479

Start Page


  • 823