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Influence of electron temperature on population inversion among electronic subbands in optically pumped semiconductor quantum wells

Journal Article


Abstract


  • A detailed theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well system which may behave as a 3-level far-infrared laser generator. The influence of electron temperature and pumping intensity on the population inversion in this laser system proposed very recently, has been studied through calculating the inter-subband electronic scattering rate caused by electron-LO-phonon interactions and by optical absorption scattering. Theoretical results obtained from this study indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g. applying an in-plane electric field. © World Scientific Publishing Company.

Publication Date


  • 1996

Citation


  • Xu, W., & Zhang, C. (1996). Influence of electron temperature on population inversion among electronic subbands in optically pumped semiconductor quantum wells. Modern Physics Letters B, 10(27), 1323-1331. doi:10.1142/S0217984996001498

Scopus Eid


  • 2-s2.0-26844547185

Start Page


  • 1323

End Page


  • 1331

Volume


  • 10

Issue


  • 27

Abstract


  • A detailed theoretical study on population inversion among different electronic subbands, induced by hot-electron interactions with LO-phonons and with photons, is presented for an optically pumped AlGaAs-GaAs double quantum well system which may behave as a 3-level far-infrared laser generator. The influence of electron temperature and pumping intensity on the population inversion in this laser system proposed very recently, has been studied through calculating the inter-subband electronic scattering rate caused by electron-LO-phonon interactions and by optical absorption scattering. Theoretical results obtained from this study indicate that at a fixed pumping intensity, the population inversion among different electronic subbands can be tuned by varying electron temperature through, e.g. applying an in-plane electric field. © World Scientific Publishing Company.

Publication Date


  • 1996

Citation


  • Xu, W., & Zhang, C. (1996). Influence of electron temperature on population inversion among electronic subbands in optically pumped semiconductor quantum wells. Modern Physics Letters B, 10(27), 1323-1331. doi:10.1142/S0217984996001498

Scopus Eid


  • 2-s2.0-26844547185

Start Page


  • 1323

End Page


  • 1331

Volume


  • 10

Issue


  • 27