Systematic theoretical investigation of structures, stabilities, and electronic properties of rhodium-doped silicon clusters: Rh2Sinq (n = 1¿10; q = 0, ±1)

Citation

• Zhang, S., Zhang, Y., Yang, X., Lu, C., Li, G., & Lu, Z. (2015). Systematic theoretical investigation of structures, stabilities, and electronic properties of rhodium-doped silicon clusters: Rh2Sinq (n = 1¿10; q = 0, ±1). Journal of Materials Science, 50(18), 6180-6196. doi:10.1007/s10853-015-9175-x

Digital Object Identifier (doi)

• 10.1007/s10853-015-9175-x

Web Of Science Accession Number

Start Page

• 6180

End Page

• 6196

Volume

• 50

Issue

• 18

Abstract

UOW Authors

•   Lu, Cheng

Publication Date

• 2015

Publisher

• Springer Science and Business Media LLC 

Published In

• Journal of Materials Science  Journal

Citation

• Zhang, S., Zhang, Y., Yang, X., Lu, C., Li, G., & Lu, Z. (2015). Systematic theoretical investigation of structures, stabilities, and electronic properties of rhodium-doped silicon clusters: Rh2Sinq (n = 1¿10; q = 0, ±1). Journal of Materials Science, 50(18), 6180-6196. doi:10.1007/s10853-015-9175-x

Digital Object Identifier (doi)

• 10.1007/s10853-015-9175-x

Web Of Science Accession Number

Start Page

• 6180

End Page

• 6196

Volume

• 50

Issue

• 18