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Plasmon assisted resonant tunneling in a double barrier heterostructure

Journal Article


Abstract


  • When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling current is investigated. Experimental data taken inside a region of apparent bistability in one device reveal a satellite on the high energy side of the current resonance in the I(V) characteristic. A theoretical model based on the many-body transfer Hamiltonian formalism shows that a plasmon excitation has remarkably similar structure. Magnetic field data support the plasmon satellite interpretation. © 1994 The American Physical Society.

Publication Date


  • 1994

Citation


  • Zhang, C., Lerch, M. L. F., Martin, A. D., Simmonds, P. E., & Eaves, L. (1994). Plasmon assisted resonant tunneling in a double barrier heterostructure. Physical Review Letters, 72(21), 3397-3400. doi:10.1103/PhysRevLett.72.3397

Scopus Eid


  • 2-s2.0-0001534891

Start Page


  • 3397

End Page


  • 3400

Volume


  • 72

Issue


  • 21

Abstract


  • When a double barrier semiconductor structure is biased near a tunneling resonance, charge can accumulate in the quantum well. Coupling between this two dimensional electron gas and the tunneling current is investigated. Experimental data taken inside a region of apparent bistability in one device reveal a satellite on the high energy side of the current resonance in the I(V) characteristic. A theoretical model based on the many-body transfer Hamiltonian formalism shows that a plasmon excitation has remarkably similar structure. Magnetic field data support the plasmon satellite interpretation. © 1994 The American Physical Society.

Publication Date


  • 1994

Citation


  • Zhang, C., Lerch, M. L. F., Martin, A. D., Simmonds, P. E., & Eaves, L. (1994). Plasmon assisted resonant tunneling in a double barrier heterostructure. Physical Review Letters, 72(21), 3397-3400. doi:10.1103/PhysRevLett.72.3397

Scopus Eid


  • 2-s2.0-0001534891

Start Page


  • 3397

End Page


  • 3400

Volume


  • 72

Issue


  • 21