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Observation of intrinsic tristability in a resonant tunneling structure

Journal Article


Abstract


  • A new technique has been developed to probe the region of apparent bistability due to a tunneling resonance in the characteristic of a semiconductor asymmetric double-barrier structure. The measuring circuit uses a voltage supply designed to have a load line with positive slope, equivalent to a voltage source and negative series resistance. The appearance of bistability and hysteresis in the characteristic is an artifact of the conventional measuring technique, which employs a load line with negative slope. The complete characteristic is found to be a continuous Z-shaped curve between 50 and 150 K, corresponding to tristability. Equivalent circuit models for the device and voltage supply predict a narrow range of circuit parameters for which a static operating point exists inside the tristable region.

Publication Date


  • 1994

Citation


  • Martin, A. D., Lerch, M. L. F., Simmonds, P. E., & Eaves, L. (1994). Observation of intrinsic tristability in a resonant tunneling structure. Applied Physics Letters, 64(10), 1248-1250. doi:10.1063/1.110854

Scopus Eid


  • 2-s2.0-36448998791

Start Page


  • 1248

End Page


  • 1250

Volume


  • 64

Issue


  • 10

Abstract


  • A new technique has been developed to probe the region of apparent bistability due to a tunneling resonance in the characteristic of a semiconductor asymmetric double-barrier structure. The measuring circuit uses a voltage supply designed to have a load line with positive slope, equivalent to a voltage source and negative series resistance. The appearance of bistability and hysteresis in the characteristic is an artifact of the conventional measuring technique, which employs a load line with negative slope. The complete characteristic is found to be a continuous Z-shaped curve between 50 and 150 K, corresponding to tristability. Equivalent circuit models for the device and voltage supply predict a narrow range of circuit parameters for which a static operating point exists inside the tristable region.

Publication Date


  • 1994

Citation


  • Martin, A. D., Lerch, M. L. F., Simmonds, P. E., & Eaves, L. (1994). Observation of intrinsic tristability in a resonant tunneling structure. Applied Physics Letters, 64(10), 1248-1250. doi:10.1063/1.110854

Scopus Eid


  • 2-s2.0-36448998791

Start Page


  • 1248

End Page


  • 1250

Volume


  • 64

Issue


  • 10