Abstract
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An automatic radiation damage monitoring system has been developed and tested. The system is based on two passive sensors for the measurement of integral ionizing and non-ionizing energy losses in silicon devices. Ionizing dose is measured in terms of dose in SiO and displacement damage in terms of 1 MeV(Si) equivalent neutron fluence. The system uses MOSFETs and PIN dosimetric diodes. �� 1999 IEEE.