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Radiation hardness study of high purity detector grade silicon

Conference Paper


Abstract

  • The damage associated with neutron irradiated and gamma irradiated high purity silicon was investigated for material grown on the basis of different manufacturing technologies. Using Hall effect measurements, observation was made of the carrier type and concentration as a function of gamma and fast neutron dose. Observation of the radiation induced defects was made on neutron irradiated ion implanted silicon detectors using Optical Deep Level Transient Conductance Spectroscopy (ODLTCS). Using this method, the role of residual impurities present within the high purity silicon bulk was observed as a function of time to determine the role of room temperature annealing.

Publication Date

  • 1996

Citation

  • Reinhard, M., Rosenfeld, A., Alexiev, D., Khivrich, V. I., Varentsov, M. D., Litovchenko, P. G., . . . Zinets, O. S. (1996). Radiation hardness study of high purity detector grade silicon. In Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 479-482).

Scopus Eid

  • 2-s2.0-0030356355

Start Page

  • 479

End Page

  • 482

Abstract

  • The damage associated with neutron irradiated and gamma irradiated high purity silicon was investigated for material grown on the basis of different manufacturing technologies. Using Hall effect measurements, observation was made of the carrier type and concentration as a function of gamma and fast neutron dose. Observation of the radiation induced defects was made on neutron irradiated ion implanted silicon detectors using Optical Deep Level Transient Conductance Spectroscopy (ODLTCS). Using this method, the role of residual impurities present within the high purity silicon bulk was observed as a function of time to determine the role of room temperature annealing.

Publication Date

  • 1996

Citation

  • Reinhard, M., Rosenfeld, A., Alexiev, D., Khivrich, V. I., Varentsov, M. D., Litovchenko, P. G., . . . Zinets, O. S. (1996). Radiation hardness study of high purity detector grade silicon. In Conference on Optoelectronic & Microelectronic Materials and Devices, Proceedings, COMMAD (pp. 479-482).

Scopus Eid

  • 2-s2.0-0030356355

Start Page

  • 479

End Page

  • 482