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MOS structure for emergency gamma and proton dosimetry

Conference Paper


Abstract


  • Effect of gamma and proton irradiation on threshold voltage shift ��V(T) for n-channel MOSFET has been studied. For MOSFET with zero gate bias during gamma irradiation the shift ��V(T) is linear with dose D(��) (up to doses of 10 Gy) and the sensitivity ��V(T)/D(��) is approximately 120 mV �� Gy-1. The sensitivity of MOSFETs with positive gate bias V(g) during irradiation varies as V(g)(2/3) and no saturation is observed up to breakdown voltage. n-MOSFETs with bias of 100 V have the sensitivity of approximately 5 V �� Gy-1. When n-MOSFETs are irradiated with 50 MeV protons the shift ��V(T) varies as D(p)0.67 (for proton doses D(p) ranged from 0.2 to 900 Gy). The positive charge storage in oxide is shown to contribute mainly to the radiation sensitivity of n-MOSFETs investigated.

Publication Date


  • 1990

Citation


  • Litovchenko, P. G., Barabash, L. I., Rosenfeld, A. B., Khivrich, V. I., Zinets, O. S., Kuts, V. I., . . . Kiblik, V. Y. (1990). MOS structure for emergency gamma and proton dosimetry. In Radiation Protection Dosimetry Vol. 33 (pp. 179-182). doi:10.1093/oxfordjournals.rpd.a080786

Scopus Eid


  • 2-s2.0-0025052505

Start Page


  • 179

End Page


  • 182

Volume


  • 33

Issue


  • 1-4

Place Of Publication


Abstract


  • Effect of gamma and proton irradiation on threshold voltage shift ��V(T) for n-channel MOSFET has been studied. For MOSFET with zero gate bias during gamma irradiation the shift ��V(T) is linear with dose D(��) (up to doses of 10 Gy) and the sensitivity ��V(T)/D(��) is approximately 120 mV �� Gy-1. The sensitivity of MOSFETs with positive gate bias V(g) during irradiation varies as V(g)(2/3) and no saturation is observed up to breakdown voltage. n-MOSFETs with bias of 100 V have the sensitivity of approximately 5 V �� Gy-1. When n-MOSFETs are irradiated with 50 MeV protons the shift ��V(T) varies as D(p)0.67 (for proton doses D(p) ranged from 0.2 to 900 Gy). The positive charge storage in oxide is shown to contribute mainly to the radiation sensitivity of n-MOSFETs investigated.

Publication Date


  • 1990

Citation


  • Litovchenko, P. G., Barabash, L. I., Rosenfeld, A. B., Khivrich, V. I., Zinets, O. S., Kuts, V. I., . . . Kiblik, V. Y. (1990). MOS structure for emergency gamma and proton dosimetry. In Radiation Protection Dosimetry Vol. 33 (pp. 179-182). doi:10.1093/oxfordjournals.rpd.a080786

Scopus Eid


  • 2-s2.0-0025052505

Start Page


  • 179

End Page


  • 182

Volume


  • 33

Issue


  • 1-4

Place Of Publication