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Transient conductance technique for characterization of deep-level defects in highly irradiated detector-grade silicon

Conference Paper


Abstract


  • The use of conventional capacitance-based deep-level transient spectroscopy is not applicable when defect concentrations approach the background carrier concentration. Due to this limitation the technique cannot be used for examining heavily irradiated silicon, or semi-insulating semiconductor materials. Optical deep-level transient conductance spectroscopy can overcome the limitations of capacitance-based techniques through the measurement of a conductance transient measured with a marginal oscillator. This paper provides details of the application of this method to heavily damaged high-purity silicon. Silicon-based PIN detector structures irradiated with 1 MeV neutrons, to approximately 3×1013 n/cm2 and detectors irradiated with 24 GeV/c protons, to 3.8×103 p/cm2, were examined.

Publication Date


  • 1999

Citation


  • Alexiev, D., Reinhard, M. I., Mo, L., & Rosenfeld, A. (1999). Transient conductance technique for characterization of deep-level defects in highly irradiated detector-grade silicon. In Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 434 (pp. 103-113). doi:10.1016/S0168-9002(99)00441-6

Scopus Eid


  • 2-s2.0-0032659706

Start Page


  • 103

End Page


  • 113

Volume


  • 434

Issue


  • 1

Abstract


  • The use of conventional capacitance-based deep-level transient spectroscopy is not applicable when defect concentrations approach the background carrier concentration. Due to this limitation the technique cannot be used for examining heavily irradiated silicon, or semi-insulating semiconductor materials. Optical deep-level transient conductance spectroscopy can overcome the limitations of capacitance-based techniques through the measurement of a conductance transient measured with a marginal oscillator. This paper provides details of the application of this method to heavily damaged high-purity silicon. Silicon-based PIN detector structures irradiated with 1 MeV neutrons, to approximately 3×1013 n/cm2 and detectors irradiated with 24 GeV/c protons, to 3.8×103 p/cm2, were examined.

Publication Date


  • 1999

Citation


  • Alexiev, D., Reinhard, M. I., Mo, L., & Rosenfeld, A. (1999). Transient conductance technique for characterization of deep-level defects in highly irradiated detector-grade silicon. In Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Vol. 434 (pp. 103-113). doi:10.1016/S0168-9002(99)00441-6

Scopus Eid


  • 2-s2.0-0032659706

Start Page


  • 103

End Page


  • 113

Volume


  • 434

Issue


  • 1