Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage

Citation

• Wang, X., Weng, Q., Liu, X., Wang, X., Tang, D. -M., Tian, W., . . . Golberg, D. (2014). Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage. NANO LETTERS, 14(3), 1164-1171. doi:10.1021/nl4038592

Digital Object Identifier (doi)

• 10.1021/nl4038592

Web Of Science Accession Number

• WOS:000335720300010

Number Of Pages

• 8

Start Page

• 1164

End Page

• 1171

Volume

• 14

Issue

• 3

Place Of Publication

Abstract

UOW Authors

•   Bando, Yoshio

Publication Date

• 2014

Publisher

• AMER CHEMICAL SOC 

Published In

• NANO LETTERS  Journal

Citation

• Wang, X., Weng, Q., Liu, X., Wang, X., Tang, D. -M., Tian, W., . . . Golberg, D. (2014). Atomistic Origins of High Rate Capability and Capacity of N-Doped Graphene for Lithium Storage. NANO LETTERS, 14(3), 1164-1171. doi:10.1021/nl4038592

Digital Object Identifier (doi)

• 10.1021/nl4038592

Web Of Science Accession Number

• WOS:000335720300010

Number Of Pages

• 8

Start Page

• 1164

End Page

• 1171

Volume

• 14

Issue

• 3

Place Of Publication