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Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM

Journal Article


Abstract


  • We demonstrate that high resolution transmission electron microscopy (HRTEM) paired with light illumination of a sample and its electrical probing can be utilized for the in situ study of initiated photocurrents in free-standing nanowires. Morphology, phase and crystallographic information from numerous individual CdS nanowires is obtained simultaneously with photocurrent measurements. Our results indicate that elastically bent CdS nanowires possessing a wurtzite structure show statistically unchanged values of ON/OFF (photocurrent/dark current) ratios. Photocurrent spectroscopy reveals red shifts of several nanometers in the cutoff wavelength after nanowire bending. This results from deformation-induced lattice strain and associated changes in the nanowire band structure, as confirmed by selected area electron diffraction (SAED) analyses and density functional tight binding (DFTB) simulations. The ON/OFF ratio stabilities and photocurrent spectroscopy shift of bent CdS nanowires are important clues for future flexible electronics, optoelectronics, and photovoltaics.

Publication Date


  • 2016

Citation


  • Zhang, C., Cretu, O., Kvashnin, D. G., Kawamoto, N., Mitome, M., Wang, X., . . . Golberg, D. (2016). Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM. Nano Letters, 16(10), 6008-6013. doi:10.1021/acs.nanolett.6b01614

Scopus Eid


  • 2-s2.0-84992691567

Start Page


  • 6008

End Page


  • 6013

Volume


  • 16

Issue


  • 10

Place Of Publication


Abstract


  • We demonstrate that high resolution transmission electron microscopy (HRTEM) paired with light illumination of a sample and its electrical probing can be utilized for the in situ study of initiated photocurrents in free-standing nanowires. Morphology, phase and crystallographic information from numerous individual CdS nanowires is obtained simultaneously with photocurrent measurements. Our results indicate that elastically bent CdS nanowires possessing a wurtzite structure show statistically unchanged values of ON/OFF (photocurrent/dark current) ratios. Photocurrent spectroscopy reveals red shifts of several nanometers in the cutoff wavelength after nanowire bending. This results from deformation-induced lattice strain and associated changes in the nanowire band structure, as confirmed by selected area electron diffraction (SAED) analyses and density functional tight binding (DFTB) simulations. The ON/OFF ratio stabilities and photocurrent spectroscopy shift of bent CdS nanowires are important clues for future flexible electronics, optoelectronics, and photovoltaics.

Publication Date


  • 2016

Citation


  • Zhang, C., Cretu, O., Kvashnin, D. G., Kawamoto, N., Mitome, M., Wang, X., . . . Golberg, D. (2016). Statistically Analyzed Photoresponse of Elastically Bent CdS Nanowires Probed by Light-Compatible in Situ High-Resolution TEM. Nano Letters, 16(10), 6008-6013. doi:10.1021/acs.nanolett.6b01614

Scopus Eid


  • 2-s2.0-84992691567

Start Page


  • 6008

End Page


  • 6013

Volume


  • 16

Issue


  • 10

Place Of Publication