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Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core - Shell Nanowires

Journal Article


Abstract


  • Selective doping and band-offset in germanium (Ge)/silicon (Si) core-shell nanowire (NW) structures can realize a type of high electron mobility transistor structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. The Fano effect is the most important to demonstrate hole gas accumulation in Ge/Si core-shell NWs. Using these techniques, we obtained conclusive evidence of the hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B-doping concentration in the Si shell.

Publication Date


  • 2015

Citation


  • Fukata, N., Yu, M., Jevasuwan, W., Takei, T., Bando, Y., Wu, W., & Wang, Z. L. (2015). Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core - Shell Nanowires. ACS Nano, 9(12), 12182-12188. doi:10.1021/acsnano.5b05394

Scopus Eid


  • 2-s2.0-84952322613

Start Page


  • 12182

End Page


  • 12188

Volume


  • 9

Issue


  • 12

Place Of Publication


Abstract


  • Selective doping and band-offset in germanium (Ge)/silicon (Si) core-shell nanowire (NW) structures can realize a type of high electron mobility transistor structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. The Fano effect is the most important to demonstrate hole gas accumulation in Ge/Si core-shell NWs. Using these techniques, we obtained conclusive evidence of the hole gas accumulation in Ge/Si core-shell NWs. The control of hole gas concentration can be realized by changing the B-doping concentration in the Si shell.

Publication Date


  • 2015

Citation


  • Fukata, N., Yu, M., Jevasuwan, W., Takei, T., Bando, Y., Wu, W., & Wang, Z. L. (2015). Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core - Shell Nanowires. ACS Nano, 9(12), 12182-12188. doi:10.1021/acsnano.5b05394

Scopus Eid


  • 2-s2.0-84952322613

Start Page


  • 12182

End Page


  • 12188

Volume


  • 9

Issue


  • 12

Place Of Publication