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Quantum ratchet in two-dimensional semiconductors with Rashba spin-orbit interaction

Journal Article


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Abstract


  • Ratchet is a device that produces direct current of particles when driven by an unbiased force. We demonstrate a simple scattering quantum ratchet based on an asymmetrical quantum tunneling effect in two-dimensional electron gas with Rashba spin-orbit interaction (R2DEG). We consider the tunneling of electrons across a square potential barrier sandwiched by interface scattering potentials of unequal strengths on its either sides. It is found that while the intra-spin tunneling probabilities remain unchanged, the inter-spin-subband tunneling probabilities of electrons crossing the barrier in one direction is unequal to that of the opposite direction. Hence, when the system is driven by an unbiased periodic force, a directional flow of electron current is generated. The scattering quantum ratchet in R2DEG is conceptually simple and is capable of converting a.c. driving force into a rectified current without the need of additional symmetry breaking mechanism or external magnetic field.

Authors


  •   Ang, Yee Sin S. (external author)
  •   Ma, Zhongshui (external author)
  •   Chao Zhang

Publication Date


  • 2015

Citation


  • Ang, Y., Ma, Z. & Zhang, C. (2015). Quantum ratchet in two-dimensional semiconductors with Rashba spin-orbit interaction. Scientific Reports, 5 07872-1-07872-7.

Scopus Eid


  • 2-s2.0-84923115966

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=4439&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/3422

Start Page


  • 07872-1

End Page


  • 07872-7

Volume


  • 5

Abstract


  • Ratchet is a device that produces direct current of particles when driven by an unbiased force. We demonstrate a simple scattering quantum ratchet based on an asymmetrical quantum tunneling effect in two-dimensional electron gas with Rashba spin-orbit interaction (R2DEG). We consider the tunneling of electrons across a square potential barrier sandwiched by interface scattering potentials of unequal strengths on its either sides. It is found that while the intra-spin tunneling probabilities remain unchanged, the inter-spin-subband tunneling probabilities of electrons crossing the barrier in one direction is unequal to that of the opposite direction. Hence, when the system is driven by an unbiased periodic force, a directional flow of electron current is generated. The scattering quantum ratchet in R2DEG is conceptually simple and is capable of converting a.c. driving force into a rectified current without the need of additional symmetry breaking mechanism or external magnetic field.

Authors


  •   Ang, Yee Sin S. (external author)
  •   Ma, Zhongshui (external author)
  •   Chao Zhang

Publication Date


  • 2015

Citation


  • Ang, Y., Ma, Z. & Zhang, C. (2015). Quantum ratchet in two-dimensional semiconductors with Rashba spin-orbit interaction. Scientific Reports, 5 07872-1-07872-7.

Scopus Eid


  • 2-s2.0-84923115966

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=4439&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/3422

Start Page


  • 07872-1

End Page


  • 07872-7

Volume


  • 5