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Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator

Journal Article


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Abstract


  • We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

Authors


  •   Chen, Qinjun (external author)
  •   Sanderson, Matthew (external author)
  •   Cao, Juncheng (external author)
  •   Chao Zhang

Publication Date


  • 2014

Citation


  • Chen, Q., Sanderson, M., Cao, J. C. & Zhang, C. (2014). Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator. Applied Physics Letters, 105 (20), 202110-1-202110-5.

Scopus Eid


  • 2-s2.0-84911889387

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=4394&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/3377

Start Page


  • 202110-1

End Page


  • 202110-5

Volume


  • 105

Issue


  • 20

Abstract


  • We theoretically studied the frequency-dependent current response of the bulk state of topological insulator HgTe/CdTe quantum well. The optical conductivity is mainly due to the inter-band process at high frequencies. At low frequencies, intra-band process dominates with a dramatic drop to near zero before the inter-band contribution takes over. The conductivity decreases with temperature at low temperature and increases with temperature at high temperature. The transport scattering rate has an opposite frequency dependence in the low and high temperature regime. The different frequency dependence is due to the interplay of the carrier-impurity scattering and carrier population near the Fermi surface.

Authors


  •   Chen, Qinjun (external author)
  •   Sanderson, Matthew (external author)
  •   Cao, Juncheng (external author)
  •   Chao Zhang

Publication Date


  • 2014

Citation


  • Chen, Q., Sanderson, M., Cao, J. C. & Zhang, C. (2014). Dynamic conductivity of the bulk states of n-type HgTe/CdTe quantum well topological insulator. Applied Physics Letters, 105 (20), 202110-1-202110-5.

Scopus Eid


  • 2-s2.0-84911889387

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=4394&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/3377

Start Page


  • 202110-1

End Page


  • 202110-5

Volume


  • 105

Issue


  • 20