Skip to main content
placeholder image

Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals

Journal Article


Abstract


  • In this work, we analyse the influence of C4+ irradiation with ion flounce of 3 × 1012 up to 2.3 × 1015 ion·cm−2 on significant enhancement of the critical current density, Jc , in BaFe1.9Ni0.1As2 single crystals. Jc was increased from 0.61 × 105 up to 0.94 × 105 A/cm2 at T = 10 K and H = 0.5 T. BaFe1.9Ni0.1As2 single crystals with and without the C4+-irradiation were characterized by magneto-transport and magnetic measurements up to 13 T over a wide range of temperatures below and above the superconducting critical temperature, Tc . It is found that the C4+-irradiation causes little change in Tc , but it can greatly enhance the in-field critical current density by a factor of up to 1.5. Higher dose of C4+ ions, causes further Jc enhancement at T=10 K. furthermore, flux jumping completely disappeared at T=2 K after second C4+-irradiation. Our Monte Carlo simulation results show that all the C4+ ions end up in a well defined layer, causing extended defects and vacancies at the layer, but few defects elsewhere on the irradiation paths. Furthermore, the normal state resistivity is enhanced by the light C4+ irradiation, while the upper critical field, H c2, the irreversibility field, H irr, and Tc were affected very little.

Authors


  •   Shahbazi, Mahboobeh (external author)
  •   Wang, Xiaolin
  •   Ionescu, Mihail (external author)
  •   Ghorbani, Shaban (external author)
  •   Dou, Shi Xue
  •   Choi, Ki-Young (external author)

Publication Date


  • 2014

Citation


  • Shahbazi, M., Wang, X. L., Ionescu, M., Ghorbani, S. R., Dou, S. X. & Choi, K. Y. (2014). Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals. Science of Advanced Materials, 6 (7), 1650-1654.

Scopus Eid


  • 2-s2.0-84902991704

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1340

Has Global Citation Frequency


Number Of Pages


  • 4

Start Page


  • 1650

End Page


  • 1654

Volume


  • 6

Issue


  • 7

Place Of Publication


  • United States

Abstract


  • In this work, we analyse the influence of C4+ irradiation with ion flounce of 3 × 1012 up to 2.3 × 1015 ion·cm−2 on significant enhancement of the critical current density, Jc , in BaFe1.9Ni0.1As2 single crystals. Jc was increased from 0.61 × 105 up to 0.94 × 105 A/cm2 at T = 10 K and H = 0.5 T. BaFe1.9Ni0.1As2 single crystals with and without the C4+-irradiation were characterized by magneto-transport and magnetic measurements up to 13 T over a wide range of temperatures below and above the superconducting critical temperature, Tc . It is found that the C4+-irradiation causes little change in Tc , but it can greatly enhance the in-field critical current density by a factor of up to 1.5. Higher dose of C4+ ions, causes further Jc enhancement at T=10 K. furthermore, flux jumping completely disappeared at T=2 K after second C4+-irradiation. Our Monte Carlo simulation results show that all the C4+ ions end up in a well defined layer, causing extended defects and vacancies at the layer, but few defects elsewhere on the irradiation paths. Furthermore, the normal state resistivity is enhanced by the light C4+ irradiation, while the upper critical field, H c2, the irreversibility field, H irr, and Tc were affected very little.

Authors


  •   Shahbazi, Mahboobeh (external author)
  •   Wang, Xiaolin
  •   Ionescu, Mihail (external author)
  •   Ghorbani, Shaban (external author)
  •   Dou, Shi Xue
  •   Choi, Ki-Young (external author)

Publication Date


  • 2014

Citation


  • Shahbazi, M., Wang, X. L., Ionescu, M., Ghorbani, S. R., Dou, S. X. & Choi, K. Y. (2014). Simulation of light C4+ ion irradiation and its enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals. Science of Advanced Materials, 6 (7), 1650-1654.

Scopus Eid


  • 2-s2.0-84902991704

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1340

Has Global Citation Frequency


Number Of Pages


  • 4

Start Page


  • 1650

End Page


  • 1654

Volume


  • 6

Issue


  • 7

Place Of Publication


  • United States