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Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy

Conference Paper


Abstract


  • We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.

Publication Date


  • 2013

Citation


  • Chen, Q., Shi, D., Wang, X., Lewis, R. A. & Zhang, C. (2013). Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy. 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 1-2). Germany: The Institute of Electrical and Electronics Engineers Inc.

Scopus Eid


  • 2-s2.0-84893419913

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1008

Start Page


  • 1

End Page


  • 2

Place Of Publication


  • Germany

Abstract


  • We have fabricated Sb2Te3 thin films, with different thicknesses by controlling the deposition times, using pulsed laser deposition. We studied the dielectric properties using terahertz time domain spectroscopy (TDS). The real and imaginary parts of the complex refractive index of Sb2Te3 thin films were presented.

Publication Date


  • 2013

Citation


  • Chen, Q., Shi, D., Wang, X., Lewis, R. A. & Zhang, C. (2013). Dielectric properties of Bi doped Sb2Te3 thin films studied by terahertz time-domain spectroscopy. 38th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) (pp. 1-2). Germany: The Institute of Electrical and Electronics Engineers Inc.

Scopus Eid


  • 2-s2.0-84893419913

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1008

Start Page


  • 1

End Page


  • 2

Place Of Publication


  • Germany