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AFM and ellipsometry studies of ultra thin Ti film deposited on a silicon wafer

Journal Article


Abstract


  • An ultra- thin Ti film with a thickness of less than 30 nm was deposited on the surface of a silicon wafer by the filtered arc deposition system. A novel technique was adopted to create a height step between the coated area and non-coated area (silicon wafer) during deposition. The surface morphology and thickness of the film was detected by atomic force microscopy (AFM). The AFM results showed that the deposited film formed a smooth structure on the silicon wafer and the height step between the coating and silicon wafer was clear enough to give the thickness of the deposited film. The composition of the deposited film was detected by a combined use of Ellipsometry and AFM. Natural oxidisation of Ti (TiO2) was found on the top of the Ti film after deposition, and the thickness of TiO2 was determined by ellipsometry to be about 0.6 nm.

Publication Date


  • 2014

Citation


  • Lin, B., Zhu, H., Tieu, A. Kiet. & Triani, G. (2014). AFM and ellipsometry studies of ultra thin Ti film deposited on a silicon wafer. Materials Science Forum, 773-774 616-625.

Scopus Eid


  • 2-s2.0-84891498779

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/2286

Has Global Citation Frequency


Number Of Pages


  • 9

Start Page


  • 616

End Page


  • 625

Volume


  • 773-774

Place Of Publication


  • Switzerland

Abstract


  • An ultra- thin Ti film with a thickness of less than 30 nm was deposited on the surface of a silicon wafer by the filtered arc deposition system. A novel technique was adopted to create a height step between the coated area and non-coated area (silicon wafer) during deposition. The surface morphology and thickness of the film was detected by atomic force microscopy (AFM). The AFM results showed that the deposited film formed a smooth structure on the silicon wafer and the height step between the coating and silicon wafer was clear enough to give the thickness of the deposited film. The composition of the deposited film was detected by a combined use of Ellipsometry and AFM. Natural oxidisation of Ti (TiO2) was found on the top of the Ti film after deposition, and the thickness of TiO2 was determined by ellipsometry to be about 0.6 nm.

Publication Date


  • 2014

Citation


  • Lin, B., Zhu, H., Tieu, A. Kiet. & Triani, G. (2014). AFM and ellipsometry studies of ultra thin Ti film deposited on a silicon wafer. Materials Science Forum, 773-774 616-625.

Scopus Eid


  • 2-s2.0-84891498779

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/2286

Has Global Citation Frequency


Number Of Pages


  • 9

Start Page


  • 616

End Page


  • 625

Volume


  • 773-774

Place Of Publication


  • Switzerland