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Charge collection in n-SOI planar microdosimeters

Journal Article


Abstract


  • An n-SOI microdosimeter which has been proposed

    as a device for predicting the occurrence of single event effects

    in semiconductor electronics in the high-energy, mixed heavy ion

    space radiation environment has been investigated to better understand

    the charge collection geometry and charge collection mechanisms.

    Ion beam induced charge collection studies using 20 MeV

    C ions, 5.5 MeV He ions, and 2 MeV H ions were carried out,

    and the effects of different bias conditions, angles of ion incidence,

    and coincidence analysis were observed to understand the sensitive

    volume geometry. The energy response of the n-SOI microdosimeter

    has been observed to exhibit an over-response of 56%,

    113%, and 23% for the above ions compared to expected energy

    depositions calculated using SRIM 2008. No relationship between

    particle LET AU: Please provide spelling for “LET” and the enhance

    energy response was apparent. A comparison of experimentally

    measured and simulated spectra suggest a cylindrical charge

    collection geometry despite the physical rectangular parallelepiped

    geometry of the p-i-n diode. This was supported by observing the

    response of the microdosimeter to ions at oblique ion incidence.

    A simplified model of diffusion charge collection found that diffusion

    charge collection contributes to the low-energy tail observed

    in experimental spectra, but does not account for the observed enhanced

    energy response. This supports the current theory that the

    enhanced energy response is a result of a displacement current produced

    when charge carriers in the substrate induce charge in the

    SOI layer due to the parasitic capacitance of the buried SiO insulating

    layer.

Publication Date


  • 2013

Citation


  • Livingstone, J., Prokopovich, D. A., Tran, T., Guatelli, S., Petasecca, M., Lerch, M. LF., Reinhard, M. I., Perevertaylo, V. L., Ziegler, J. F., Zaider, M. & Rozenfeld, A. (2013). Charge collection in n-SOI planar microdosimeters. IEEE Transactions on Nuclear Science, 60 (6), 4289-4296.

Scopus Eid


  • 2-s2.0-84891557097

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/1898

Number Of Pages


  • 7

Start Page


  • 4289

End Page


  • 4296

Volume


  • 60

Issue


  • 6

Abstract


  • An n-SOI microdosimeter which has been proposed

    as a device for predicting the occurrence of single event effects

    in semiconductor electronics in the high-energy, mixed heavy ion

    space radiation environment has been investigated to better understand

    the charge collection geometry and charge collection mechanisms.

    Ion beam induced charge collection studies using 20 MeV

    C ions, 5.5 MeV He ions, and 2 MeV H ions were carried out,

    and the effects of different bias conditions, angles of ion incidence,

    and coincidence analysis were observed to understand the sensitive

    volume geometry. The energy response of the n-SOI microdosimeter

    has been observed to exhibit an over-response of 56%,

    113%, and 23% for the above ions compared to expected energy

    depositions calculated using SRIM 2008. No relationship between

    particle LET AU: Please provide spelling for “LET” and the enhance

    energy response was apparent. A comparison of experimentally

    measured and simulated spectra suggest a cylindrical charge

    collection geometry despite the physical rectangular parallelepiped

    geometry of the p-i-n diode. This was supported by observing the

    response of the microdosimeter to ions at oblique ion incidence.

    A simplified model of diffusion charge collection found that diffusion

    charge collection contributes to the low-energy tail observed

    in experimental spectra, but does not account for the observed enhanced

    energy response. This supports the current theory that the

    enhanced energy response is a result of a displacement current produced

    when charge carriers in the substrate induce charge in the

    SOI layer due to the parasitic capacitance of the buried SiO insulating

    layer.

Publication Date


  • 2013

Citation


  • Livingstone, J., Prokopovich, D. A., Tran, T., Guatelli, S., Petasecca, M., Lerch, M. LF., Reinhard, M. I., Perevertaylo, V. L., Ziegler, J. F., Zaider, M. & Rozenfeld, A. (2013). Charge collection in n-SOI planar microdosimeters. IEEE Transactions on Nuclear Science, 60 (6), 4289-4296.

Scopus Eid


  • 2-s2.0-84891557097

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/1898

Number Of Pages


  • 7

Start Page


  • 4289

End Page


  • 4296

Volume


  • 60

Issue


  • 6