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Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction

Journal Article


Abstract


  • Titanium silicide (TiSi2) is well known for application as a local interconnect

    material in complementary metal-oxide semiconductor technology. This

    paper reports on a comprehensive analysis of titanium silicide thin films by a

    variety of spectroscopy, diffraction and microscopy techniques. The

    composition and uniformity of the thin films and the oxygen contamination

    in the thin films is studied using Auger electron spectroscopy and secondary

    ion mass spectrometry; these have highlighted the existence of a thin film of

    uniform and desired composition, with a layer of oxide on the surface.

    Atomic force microscopy is used to study the surface morphology of the thin

    films. Microanalysis of the titanium silicide thin films was carried out using

    cross-sectional transmission electron microscopy; and a silicide–silicon

    interface which is abrupt and free of amorphous oxide is evident. X-ray

    diffraction (Bragg-Brentano and glancing angle), reflection high-energy

    electron diffraction and selected-area electron diffraction have been used to

    analyse the orientation of the thin films, and verify the presence of the

    desired C54 phase. The stress of the thin films is qualitatively studied by

    forming micro-beams of titanium silicide by bulk-micromachining of

    silicon, and the curvature of the micro-beams formed confirms tensile stress

    at the silicide–silicon interface. The thin films are also characterized using

    ellipsometry and thin film resistivity measurements.

UOW Authors


  •   Bhaskaran, Madhu (external author)
  •   Sriram, Sharath (external author)
  •   Short, K T. (external author)
  •   Mitchell, David
  •   Holland, A S. (external author)
  •   Reeves, G K. (external author)

Publication Date


  • 2007

Citation


  • Bhaskaran, M., Sriram, S., Short, K. T., Mitchell, D. RG., Holland, A. S. & Reeves, G. K. (2007). Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction. Journal of Physics D: Applied Physics, 40 (17), 5213-5219.

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/898

Number Of Pages


  • 6

Start Page


  • 5213

End Page


  • 5219

Volume


  • 40

Issue


  • 17

Place Of Publication


  • United Kingdom

Abstract


  • Titanium silicide (TiSi2) is well known for application as a local interconnect

    material in complementary metal-oxide semiconductor technology. This

    paper reports on a comprehensive analysis of titanium silicide thin films by a

    variety of spectroscopy, diffraction and microscopy techniques. The

    composition and uniformity of the thin films and the oxygen contamination

    in the thin films is studied using Auger electron spectroscopy and secondary

    ion mass spectrometry; these have highlighted the existence of a thin film of

    uniform and desired composition, with a layer of oxide on the surface.

    Atomic force microscopy is used to study the surface morphology of the thin

    films. Microanalysis of the titanium silicide thin films was carried out using

    cross-sectional transmission electron microscopy; and a silicide–silicon

    interface which is abrupt and free of amorphous oxide is evident. X-ray

    diffraction (Bragg-Brentano and glancing angle), reflection high-energy

    electron diffraction and selected-area electron diffraction have been used to

    analyse the orientation of the thin films, and verify the presence of the

    desired C54 phase. The stress of the thin films is qualitatively studied by

    forming micro-beams of titanium silicide by bulk-micromachining of

    silicon, and the curvature of the micro-beams formed confirms tensile stress

    at the silicide–silicon interface. The thin films are also characterized using

    ellipsometry and thin film resistivity measurements.

UOW Authors


  •   Bhaskaran, Madhu (external author)
  •   Sriram, Sharath (external author)
  •   Short, K T. (external author)
  •   Mitchell, David
  •   Holland, A S. (external author)
  •   Reeves, G K. (external author)

Publication Date


  • 2007

Citation


  • Bhaskaran, M., Sriram, S., Short, K. T., Mitchell, D. RG., Holland, A. S. & Reeves, G. K. (2007). Characterization of C54 titanium silicide thin films by spectroscopy, microscopy and diffraction. Journal of Physics D: Applied Physics, 40 (17), 5213-5219.

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/898

Number Of Pages


  • 6

Start Page


  • 5213

End Page


  • 5219

Volume


  • 40

Issue


  • 17

Place Of Publication


  • United Kingdom