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Microstructural investigation of nickel silicide thin films and the silicide–silicon interface using transmission electron microscopy

Journal Article


Abstract


  • This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on

    silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were

    characterized with a range of TEM-based techniques along with glancing angle X-ray diffraction. The nickel silicide thin films were formed by

    vacuum annealing thin films of nickel (50 nm) deposited on (1 0 0) silicon. The cross-sectional samples indicated a final silicide thickness of about

    110 nm. This investigation studied and reports on three aspects of the thermally formed thin films: the uniformity in composition of the film using

    jump ratio maps; the nature of the interface using high resolution imaging; and the crystalline orientation of the thin films using selected-area

    electron diffraction (SAED). The analysis highlighted uniform composition in the thin films, which was also substantiated by spectroscopy

    techniques; an interface exhibiting the desired abrupt transition from silicide to silicon; and desired and preferential crystalline orientation

    corresponding to stoichiometric NiSi, supported by glancing angle X-ray diffraction results.

UOW Authors


  •   Bhaskaran, Madhu (external author)
  •   Sriram, Sharath (external author)
  •   Mitchell, David
  •   Short, K T. (external author)
  •   Holland, A S. (external author)
  •   Mitchell, Arnan (external author)

Publication Date


  • 2009

Published In


Citation


  • Bhaskaran, M., Sriram, S., Mitchell, D. RG., Short, K. T., Holland, A. S. & Mitchell, A. (2009). Microstructural investigation of nickel silicide thin films and the silicide–silicon interface using transmission electron microscopy. Micron, 40 (1), 11-14.

Scopus Eid


  • 2-s2.0-54349110403

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/880

Has Global Citation Frequency


Number Of Pages


  • 3

Start Page


  • 11

End Page


  • 14

Volume


  • 40

Issue


  • 1

Place Of Publication


  • United Kingdom

Abstract


  • This article discusses the results of transmission electron microscopy (TEM)-based investigation of nickel silicide (NiSi) thin films grown on

    silicon. Nickel silicide is currently used as the CMOS technology standard for local interconnects and in electrical contacts. Films were

    characterized with a range of TEM-based techniques along with glancing angle X-ray diffraction. The nickel silicide thin films were formed by

    vacuum annealing thin films of nickel (50 nm) deposited on (1 0 0) silicon. The cross-sectional samples indicated a final silicide thickness of about

    110 nm. This investigation studied and reports on three aspects of the thermally formed thin films: the uniformity in composition of the film using

    jump ratio maps; the nature of the interface using high resolution imaging; and the crystalline orientation of the thin films using selected-area

    electron diffraction (SAED). The analysis highlighted uniform composition in the thin films, which was also substantiated by spectroscopy

    techniques; an interface exhibiting the desired abrupt transition from silicide to silicon; and desired and preferential crystalline orientation

    corresponding to stoichiometric NiSi, supported by glancing angle X-ray diffraction results.

UOW Authors


  •   Bhaskaran, Madhu (external author)
  •   Sriram, Sharath (external author)
  •   Mitchell, David
  •   Short, K T. (external author)
  •   Holland, A S. (external author)
  •   Mitchell, Arnan (external author)

Publication Date


  • 2009

Published In


Citation


  • Bhaskaran, M., Sriram, S., Mitchell, D. RG., Short, K. T., Holland, A. S. & Mitchell, A. (2009). Microstructural investigation of nickel silicide thin films and the silicide–silicon interface using transmission electron microscopy. Micron, 40 (1), 11-14.

Scopus Eid


  • 2-s2.0-54349110403

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/880

Has Global Citation Frequency


Number Of Pages


  • 3

Start Page


  • 11

End Page


  • 14

Volume


  • 40

Issue


  • 1

Place Of Publication


  • United Kingdom