Skip to main content
placeholder image

Thermal and electrical characterization of silicon photomultiplier

Journal Article


Download full-text (Open Access)

Abstract


  • Detection of low levels of light is one of the key aspects in medical and space applications. Silicon photomultiplier, a novel type of avalanche photodetector which operates in Geiger mode, shows promising results and offer superior design options. The performance characteristics of the SiPM realized in FBK-irst are studied and presented in this paper. The leakage current, dark rate and internal gain are characterized as a function of temperature. The investigation has been carried out in the framework of the DASiPM Collaboration and the INFN/FBK-irst MEMS project. © 2008 IEEE.

UOW Authors


  •   Petasecca, Marco
  •   Alpat, Behcet (external author)
  •   Ambrosi, G (external author)
  •   Azzarello, P (external author)
  •   Battiston, R (external author)
  •   Ionica, M (external author)
  •   Papi, Andrea (external author)
  •   Pignatel%, Giorgio U. (external author)
  •   Haino, S (external author)

Publication Date


  • 2008

Geographic Focus


Citation


  • Petasecca, M., Alpat, B., Ambrosi, G., Azzarello, P., Battiston, R., Ionica, M., Papi, A., Pignatel, G. U. & Haino, S. (2008). Thermal and electrical characterization of silicon photomultiplier. IEEE Transactions on Nuclear Science, 55 (3), 1686-1690.

Scopus Eid


  • 2-s2.0-45849135663

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=2154&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/1145

Number Of Pages


  • 4

Start Page


  • 1686

End Page


  • 1690

Volume


  • 55

Issue


  • 3

Abstract


  • Detection of low levels of light is one of the key aspects in medical and space applications. Silicon photomultiplier, a novel type of avalanche photodetector which operates in Geiger mode, shows promising results and offer superior design options. The performance characteristics of the SiPM realized in FBK-irst are studied and presented in this paper. The leakage current, dark rate and internal gain are characterized as a function of temperature. The investigation has been carried out in the framework of the DASiPM Collaboration and the INFN/FBK-irst MEMS project. © 2008 IEEE.

UOW Authors


  •   Petasecca, Marco
  •   Alpat, Behcet (external author)
  •   Ambrosi, G (external author)
  •   Azzarello, P (external author)
  •   Battiston, R (external author)
  •   Ionica, M (external author)
  •   Papi, Andrea (external author)
  •   Pignatel%, Giorgio U. (external author)
  •   Haino, S (external author)

Publication Date


  • 2008

Geographic Focus


Citation


  • Petasecca, M., Alpat, B., Ambrosi, G., Azzarello, P., Battiston, R., Ionica, M., Papi, A., Pignatel, G. U. & Haino, S. (2008). Thermal and electrical characterization of silicon photomultiplier. IEEE Transactions on Nuclear Science, 55 (3), 1686-1690.

Scopus Eid


  • 2-s2.0-45849135663

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=2154&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/1145

Number Of Pages


  • 4

Start Page


  • 1686

End Page


  • 1690

Volume


  • 55

Issue


  • 3